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MagnaChip |
N-Channel Trench MOSFET VDS = 500V ID = 23A RDS(ON) ≤ 0.245Ω Applications Power Supply HID Lighting @ VGS = 10V @ VGS = 10V D TO-247 S DG GG G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuou |
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MagnaChip |
N-Channel MOSFET The MDQ10N026TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power D |
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MagnaChip |
N-channel MOSFET The MDQ14N049TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as L |
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MagnaChip |
N-Channel MOSFET VDS = 500V ID = 16.5A @VGS = 10V RDS(ON) ≤ 0.35Ω @VGS = 10V Applications Power Supply HID Lighting D TO-247 S G D G G Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Cu |
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MagnaChip |
N-Channel MOSFET VDS = 500V ID = 20.0A RDS(ON) ≤ 0.27Ω Applications Power Supply HID Lighting @ VGS = 10V @ VGS = 10V D TO-247 S DG GG G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuo |
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MagnaChip |
N-Channel MOSFET • Trench Power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Battery power |
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