| No. | Partie # | Fabricant | Description | Fiche Technique |
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Magnatec |
P-CHANNEL POWER MOSFET • HIGH SPEED SWITCHING • P –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N –CHANNEL ALSO AVAILABLE AS BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907P & BUZ908P 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.80 |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907P & BUZ908P 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.80 |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907 & BUZ908 Case – Source TO –3 Pin 1 – |
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Magnatec |
P-CHANNEL POWER MOSFET • HIGH SPEED SWITCHING • P –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N –CHANNEL ALSO AVAILABLE AS BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N –CHANNEL BUZ902P & BUZ903P 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.80 |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907 & BUZ908 Case – Source TO –3 Pin 1 – |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907D & BUZ908D Case – Source TO –3 Pin 1 |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907D & BUZ908D Case – Source TO –3 Pin 1 |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907DP & BUZ908DP 5.45 5.45 TO-3PBL Pin 1 – Gate |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P –CHANNEL BUZ907DP & BUZ908DP 5.45 5.45 TO-3PBL Pin 1 – Gate |
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Magna Tec |
N-Channel MOSFET • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N –CHANNEL BUZ902P & BUZ903P 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.80 |
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