No. | Partie # | Fabricant | Description | Fiche Technique |
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MACRONIX |
FLASH MEMORY • 1.65 to 2.0 volt for read, erase, and program operations • Multi I/O Support - Single I/O, Dual I/O and Quad I/O • Quad Peripheral Interface (QPI) Read / Program Mode • Program Suspend/Resume & Erase Suspend/Resume • Permanently fixed QE bit, QE=1 |
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MACRONIX |
FLASH MEMORY .............................................................................................................................................................. 4 2. GENERAL DESCRIPTION................................................................... |
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Macronix International |
MX25L6406E .............................................................................................................................................................. 5 2. GENERAL DESCRIPTION................................................................... |
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Macronix |
MX25L12835F .............................................................................................................................................................. 4 2. GENERAL DESCRIPTION................................................................... |
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Macronix International |
MX25L1605D GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure 32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure 64M:67 |
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MACRONIX |
FLASH MEMORY • Multi I/O Support - Single I/O, Dual I/O and Quad I/O • Auto Erase and Auto Program Algorithms • Program Suspend/Resume & Erase Suspend/Resume • Permanently fixed QE bit, QE=1; and 4 I/O mode is enabled P/N: PM2204 REV. 1.0, DEC. 31, 2014 1 MX25 |
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MACRONIX |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY • Multi I/O Support - Single I/O, Dual I/O and Quad I/O • Auto Erase and Auto Program Algorithms • Continuous Program mode • Permanently fixed QE bit, QE=1; and 4 I/O mode is enabled P/N: PM1907 REV. 1.4, JUN. 16, 2015 1 MX25L6473E Contents 1. FEA |
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Macronix |
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH .................................................................................................................................................................. 5 GENERAL DESCRIPTION.................................................................. |
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MACRONIX |
FLASH MEMORY .................................................................................................................................................................. 5 GENERAL DESCRIPTION.................................................................. |
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MACRONIX |
CMOS SERIAL NOR FLASH MEMORY • Low Power Consumption • 2.7 to 3.6 volt for read, erase, and program operations • Dual Output Mode (DREAD) • Auto Erase and Auto Program Algorithm • HOLD FEATURE P/N: PM1669 Rev. 1.4, July 21, 2016 1 MX25L512E Contents FEATURES........... |
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Macronix |
MX29F4000 • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) www.DataSheet4U.com - 1uA typical standby cu |
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Macronix International |
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH .............................................................................................................................................................. 5 2. GENERAL DESCRIPTION................................................................... |
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Macronix International |
512K-BIT [x 1] CMOS SERIAL FLASH Memory .................................................................................................................................................................. 4 GENERAL.............................................................................. |
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MACRONIX |
FLASH MEMORY • Multi I/O Support - Single I/O, Dual I/O and Quad I/O • Quad I/O mode is permanently enabled • Support DTR (Double Transfer Rate) Mode • 8/16/32/64 byte Wrap-Around Read Mode Macronix Proprietary MX25U25673G Contents 1. FEATURES.................. |
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Macronix International |
CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM • • • • • Chip erase time: 2s (typ.) Chip program time: 25s (typ.) 100 minimum erase/program cycles Typical fast programming cycle duration 100us/byte Package type: - 32 pin plastic DIP - 32 pi |
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MACRONIX INTERNATIONAL |
64M-Bit Synchronous Mask ROM • Switchable organization : 4M x 16 ( word mode ) or 2M x 32 ( double word mode ) • Power supply 3.0V ~ 3.6V • TTL compatible with multiplexed address • All inputs are sampled at rising edge of system clock • Read performance : - 4-1-1-1@33MHz(RAS La |
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Macronix International |
MX25L3205D GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure 32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure 64M:67 |
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Macronix |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO .............................................................................................................................................................. 4 2. GENERAL DESCRIPTION................................................................... |
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MACRONIX |
64M-BIT [x 1] CMOS SERIAL eLiteFlash MEMORY Macronix NBitTM Memory Family 64M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY GENERAL • Serial Peripheral Interface (SPI) compatible -- Mode 0 and Mode 3 • 67,108,864 x 1 bit structure • 128 Equal Sectors with 64K byte each - Any sector can be erased |
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MACRONIX |
64M-BIT [x 1/x 2/x 4] FLASH MEMORY • Multi I/O Support - Single I/O, Dual I/O and Quad I/O • Auto Erase and Auto Program Algorithms • Program Suspend/Resume & Erase Suspend/Resume • Permanently fixed QE bit, QE=1; and 4 I/O mode is enabled P/N: PM2212 REV. 1.3, October 21, 2016 1 M |
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