| No. | Partie # | Fabricant | Description | Fiche Technique |
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Macronix International |
MX25L6406E .............................................................................................................................................................. 5 2. GENERAL DESCRIPTION................................................................... |
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Macronix International |
MX25L1605D GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure 32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure 64M:67 |
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Macronix International |
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH .............................................................................................................................................................. 5 2. GENERAL DESCRIPTION................................................................... |
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Macronix International |
512K-BIT [x 1] CMOS SERIAL FLASH Memory .................................................................................................................................................................. 4 GENERAL.............................................................................. |
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Macronix International |
CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM • • • • • Chip erase time: 2s (typ.) Chip program time: 25s (typ.) 100 minimum erase/program cycles Typical fast programming cycle duration 100us/byte Package type: - 32 pin plastic DIP - 32 pi |
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MACRONIX INTERNATIONAL |
64M-Bit Synchronous Mask ROM • Switchable organization : 4M x 16 ( word mode ) or 2M x 32 ( double word mode ) • Power supply 3.0V ~ 3.6V • TTL compatible with multiplexed address • All inputs are sampled at rising edge of system clock • Read performance : - 4-1-1-1@33MHz(RAS La |
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Macronix International |
MX25L3205D GENERAL • Serial Peripheral Interface compatible -- Mode 0 and Mode 3 • 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure 32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure 64M:67 |
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Macronix International |
MX25L3205 Macronix NBitTM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY GENERAL • Serial Peripheral Interface (SPI) compatible -- Mode 0 and Mode 3 • 33,554,432 x 1 bit structure • 64 Equal Sectors with 64K byte each - Any sector can be erased |
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Macronix International |
MX25L4005 GENERAL • Serial Peripheral Interface (SPI) compatible -- Mode 0 and Mode 3 • 4,194,304 x 1 bit structure • 128 Equal Sectors with 4K byte each - Any Sector can be erased individually www.DataSheet4U.com • 8 Equal Blocks with 64K byte each - Any Bloc |
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Macronix International |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY .................................................................................................................................................................. 5 GENERAL DESCRIPTION.................................................................. |
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Macronix International |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns Page mode access time 50/60/75 ns Totally static operation • • • • Completely TTL compatibl |
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Macronix International |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 0.2uA typical standby current |
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Macronix International |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY • 2.7V to 3.6V operation voltage • Block Structure - 32 x 128Kbyte Erase Blocks (32M) - 64 x 128Kbyte Erase Blocks (64M) - 128 x 128Kbyte Erase Blocks (128M) • Fast random / page mode access time - 120/25 ns Read Access Time (32M) - 120/25 ns Read Ac |
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Macronix International |
1M-BIT [128K x 8] CMOS FLASH MEMORY |
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Macronix International |
(MX29LV401B/T) 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55R/70/90ns • Low power consumption - 20mA max |
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Macronix International |
1M-BIT MASK ROM |
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Macronix International |
MX29F001TPC 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte Programming (7us typic |
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Macronix International |
256K-BIT [32Kx8] LOW VOLTAGE OPERATION CMOS EPROM 256K-BIT [32Kx8] LOW VOLTAGE OPERATION CMOS EPROM • • • • Completely TTL compatible Operating current: 10mA @ 3.6V, 5MHz Standby current: 10uA Package type: - 28 pin plastic DIP - 32 pin PLCC - 28 pin 8 x 13.4mm TSOP(I) • • • • • 32K x 8 organizat |
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Macronix International |
4M-BIT [512K x8] LOW VOLTAGE OPERATION CMOS EPROM 4M-BIT [512K x8] LOW VOLTAGE OPERATION CMOS EPROM • Operating current: 20mA @ 3.6V, 5MHz • Standby current: 50uA • Package type: - 32 pin plastic DIP - 32 pin PLCC/SOP - 32pin TSOP • • • • • • 512K x 8 organization Wide voltage range, 2.7V to 3.6V |
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Macronix International |
512K-BIT [64K x 8] CMOS EPROM • • • • • • 64K x 8 organization Wide voltage range, 2.7V to 3.6V +12.5V programming voltage Fast access time: 120/150/200/250ns Totally static operation Completely TTL compatible • Operating current: 10mA@ 3.6V, 5MHz • Standby current: 10uA • Pac |
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