No. | Partie # | Fabricant | Description | Fiche Technique |
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Macronix International |
2M-BIT [256K x 8] CMOS FLASH MEMORY • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us typical) - S |
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Macronix International |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 0.2uA typical standby current |
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Macronix International |
MX29F001TPC 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte Programming (7us typic |
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Macronix International |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns Auto Erase and Auto Program Algorithms - Automatically erases the whole chip - Automatically programs and verifies data at specified |
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Macronix International |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90ns • Compatible with MX29F400T/B device • Low power consumption - 40mA maximum active curren |
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Macronix International |
2M-BIT [256K x 8] CMOS FLASH MEMORY • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us typical) - S |
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Macronix International |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program |
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Macronix International |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 0.2uA typical standby current |
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Macronix International |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command register architecture - Byte/Word Progr |
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Macronix International |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90ns • Compatible with MX29F400T/B device • Low power consumption - 40mA maximum active curren |
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Macronix International |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Progra |
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Macronix International |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program |
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Macronix International |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command regi |
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Macronix International |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 0.2uA typical standby current |
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Macronix International |
8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 3ms typical - Byte programming time: 24us in average Low power dissipati |
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Macronix International |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command register architecture - Byte/Word Progr |
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Macronix International |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90ns Compatible with MX29F200T/B device Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command regist |
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Macronix International |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90ns Compatible with MX29F200T/B device Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command regist |
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Macronix International |
4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90ns • Compatible with MX29F040 device • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical |
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Macronix International |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Progra |
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