Macronix 29F fiche technique

No.	Partie #	Fabricant	Description
1	29F002	Macronix International	2M-BIT [256K x 8] CMOS FLASH MEMORY • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us typical) - S
2	29F4000	Macronix	MX29F4000 • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) www.DataSheet4U.com - 1uA typical standby cu
3	MX29F800B	Macronix International	8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 0.2uA typical standby current
4	29F001TPC	Macronix International	MX29F001TPC 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte Programming (7us typic
5	MX29F1615	Macronix International	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns Auto Erase and Auto Program Algorithms - Automatically erases the whole chip - Automatically programs and verifies data at specified
6	MX29F022	Macronix	2M-BIT[256K x 8]CMOS FLASH MEMORY • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10% Command register architecture -Byte Programming (7us typical) -Sector
7	MX29F400CT	Macronix International	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90ns • Compatible with MX29F400T/B device • Low power consumption - 40mA maximum active curren
8	IMX29F002	Macronix International	2M-BIT [256K x 8] CMOS FLASH MEMORY • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us typical) - S
9	MX29F001BTC	Macronix	1M bit CMOS Flash Memory • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte Programm
10	29F1610A	Macronix International	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program
11	29F800	Macronix International	8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 0.2uA typical standby current
12	MX29F001B	Macronix	1M bit CMOS Flash Memory • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte Programm
13	MX29F200T	Macronix International	2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command register architecture - Byte/Word Progr
14	MX29F400CB	Macronix International	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90ns • Compatible with MX29F400T/B device • Low power consumption - 40mA maximum active curren
15	MX29F100B	Macronix International	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Progra
16	MX29F1610A	Macronix International	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program
17	MX29F002	Macronix	2M-BIT[256K x 8]CMOS FLASH MEMORY • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us typical) - S
18	MX29F040	Macronix International	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command regi
19	MX29F4000	Macronix	4m-Bit CMOS Equal Sector Flash Memory • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command regi
20	MX29F002N	Macronix	2M-BIT[256K x 8]CMOS FLASH MEMORY • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Programming and erasing voltage 5V ± 10% • Command register architecture - Byte Programming (7us typical)