MacMic MMN fiche technique

No.	Partie #	Fabricant	Description
1	MMN600DB015B	MacMic	MOSFET □ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter T
2	MMN400A006U1	MacMic	MOSFET □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ Hig
3	MMN400A010U1	MacMic	100V 400A N-ch Power MOSFET □ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High
4	MMN400A006U1	MacMic	60V 400A N-ch Power MOSFET □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ Hig
5	MMN200H010X	MacMic	MOSFET □ N-channel,very low on-resistance RDS(on) □ 175℃operating temperature □ Solderable pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies INVERTER SECTOR ABSOLUTE MAXI
6	MMN550WB025B	MacMic	MOSFET ƶ Proprietary New Trench Technology ƶ RDS(ON).typ=1.5mȍ@VGS=10V ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery Schottky Diode ƶ10K ȍ Gate Protected Resistance Inside ƶ Inside the module,each MOSFET chip has a gate resistance:10ȍ APPLICATI
7	MMN1000DB010B	MacMic	MOSFET ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant A
8	MMN668A010U1	MacMic	MOSFET □ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High
9	MMN1000DB010B	MacMic	100V 1000A N-ch Power MOSFET ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant A
10	MMN668A010U1	MacMic	100V 668A N-ch Power MOSFET □ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High
11	MMN600DB015B	MacMic	150V 600A N-ch Power MOSFET □ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter T
12	MMN600DB012B	MacMic	N-ch Power MOSFET ' ? H T SU './ "/H.'( '$' $)'() G6 BIV56 7 ? [-C?) AE!6DM1H"H$3!4 u ? 'W X"6Y X"6Y 5H6V6 5H6V6 2 U)