| No. | Partie # | Fabricant | Description | Fiche Technique |
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MOS-TECH |
N-Channel Power MOSFET VDS=30V ℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ @VGS=10V ≦RDS(ON) 10mΩ @VGS=4.5V High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Applications： Switching Applications. ℃Absolute Maximum Ratings (TA = 25 unless o |
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MOS-TECH |
N-Channel Powe MOSFET • 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V • Low gate charge ( typical 14 nC) • Low Crss ( typical 35 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless ot |
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MOS-TECH |
N-Channel Power MOSFET General Description JuO\ 2009 Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall effic |
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MOS-TECH |
P-Channel MOSFET • -9.4A, -100V, RDS(on) = 0.15Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 100% RG tested • RoHS Compliant DD G S D-PAK Absolute Maximum Rating |
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