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MIC US1 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BUS131A

Inchange Semiconductor
Silicon NPN Power Transistor
Datasheet
2
US1881

Melexis Microelectronic Systems
Hall Latch
and Benefits
 Wide operating voltage range from 3.5V to 24V
 High magnetic sensitivity
  – Multi-purpose
 CMOS technology
 Chopper-stabilized amplifier stage
 Low current consumption
 Open drain output
 Thin SOT23 3L and flat TO-92 3L both RoHS
Datasheet
3
US1K

TAIWAN SEMICONDUCTOR
1.0AMP High Efficient Surface Mount Rectifiers
— — — — — — — — — — — Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low pow
Datasheet
4
BUS131

Inchange Semiconductor
Silicon NPN Power Transistor
Datasheet
5
US1D

General Semiconductor
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junctions ♦ Low profile package ♦ Easy pick and place ♦ Ultrafast recovery times for high efficiency ♦ Low forwar
Datasheet
6
BUS133A

Inchange Semiconductor
Silicon NPN Power Transistor
33/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS133 BUS133A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitte
Datasheet
7
BUS132H

Inchange Semiconductor
Silicon NPN Power Transistor
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Vol
Datasheet
8
US1GF

MIC
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Datasheet
9
US1GFA

Fairchild Semiconductor
Super Fast Surface Mount Rectifiers

• Glass Passivated Chip Junction
• Low Power Loss, High Efficiency
• Fast Switching Reverse Recovery Time: 50~75 ns Maximum
• High Surge Capacity
• UL Flammability 94V-0 Classification
• MSL 1 per J-STD-020
• RoHS Compliant / Green Molding Compound
Datasheet
10
US1JFA

Fairchild Semiconductor
Super Fast Surface Mount Rectifiers

• Glass Passivated Chip Junction
• Low Power Loss, High Efficiency
• Fast Switching Reverse Recovery Time: 50~75 ns Maximum
• High Surge Capacity
• UL Flammability 94V-0 Classification
• MSL 1 per J-STD-020
• RoHS Compliant / Green Molding Compound
Datasheet
11
FMG2G50US120

Fairchild Semiconductor
IGBT

• Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 50A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
• UL Certified No.E209204 Application
• AC & DC Motor Control
Datasheet
12
US1M

MIC
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Datasheet
13
US1K

MIC
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Datasheet
14
US1J

MIC
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Datasheet
15
US1G

MIC
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Datasheet
16
US1D

MIC
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Datasheet
17
US1A

MIC
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Datasheet
18
US1B

General Semiconductor
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junctions ♦ Low profile package ♦ Easy pick and place ♦ Ultrafast recovery times for high efficiency ♦ Low forwar
Datasheet
19
US1G

General Semiconductor
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junctions ♦ Low profile package ♦ Easy pick and place ♦ Ultrafast recovery times for high efficiency ♦ Low forwar
Datasheet
20
BUS133H

Inchange Semiconductor
Silicon NPN Power Transistor
ied SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VCE(sat)-2 Collector-Emitter Saturation
Datasheet



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