No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
Transil ■ Peak pulse power: – 1500 W (10/1000 μs) – 10 kW (8/20 μs) Stand off voltage range: from 5 V to 188 V Unidirectional and bidirectional types Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C Operating Tj max: 150 °C High power capability at Tj |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min. Typical IR less than 1μA above 10V High temperatur |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity leve |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.0V to 440V. ▪ Peak power dissipation 1500W @10 x 1000 us Pulse ▪ Low profile package. ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direct |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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General Semiconductor |
AUTOMOTIVE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR N DO-214AB Modified J-Bend 0.126 (3.20) 0.114 (2.90) 0.245 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.008 (0.203) MAX. ♦ Designed fo |
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Central Semiconductor |
SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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STMicroelectronics |
Transil ■ Peak pulse power: – 1500 W (10/1000 μs) – 10 kW (8/20 μs) Stand off voltage range: from 5 V to 188 V Unidirectional and bidirectional types Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C Operating Tj max: 150 °C High power capability at Tj |
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STMicroelectronics |
Transil ■ Peak pulse power: – 1500 W (10/1000 μs) – 10 kW (8/20 μs) Stand off voltage range: from 5 V to 188 V Unidirectional and bidirectional types Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C Operating Tj max: 150 °C High power capability at Tj |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity leve |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min. Typical IR less than 1μA above 10V High temperatur |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.0V to 440V. ▪ Peak power dissipation 1500W @10 x 1000 us Pulse ▪ Low profile package. ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direct |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.0V to 440V. ▪ Peak power dissipation 1500W @10 x 1000 us Pulse ▪ Low profile package. ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direct |
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Taiwan Semiconductor |
1500W TVS ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Mois |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity leve |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity leve |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity leve |
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