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Taiwan Semiconductor Company |
30V P-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch P-Channel MOSFET Ordering Information Part No. TSM4435CS RL Package SOP-8 Packing 2.5Kpcs / |
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FAIRVIEW MICROWAVE |
N-N M/M 18GHZ FLANGE ADAPTER |
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Texas Instruments |
16-/32-Bit RISC Flash Microcontroller 1 • High-Performance Static CMOS Technology • SM470R1x 16-/32-Bit RISC Core ( ARM7TDMI™) – 60-MHz System Clock (Pipeline Mode) – Independent 16-/32-Bit Instruction Set – Open Architecture With Third-Party Support – Built-In Debug Module • Integrated |
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Rectron Semiconductor |
FAST RECOVERY SILICON RECTIFIER * * * * * * * Fast switching Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram MELF MECHANICAL DATA * Epoxy : Device has UL flammability |
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Cypress Semiconductor |
LUPA 4000: 4 MegaPixel CMOS Image Sensor ■ 2048 x 2048 active pixels ■ 12 µm x 12 µm square pixels ■ Optical format: 24.6 mm x 24.6 mm ■ Monochrome or Color digital output ■ 15 fps frame rate at full resolution ■ 2 on-chip 10-bit ADCs ■ Random programmable windowing and sub-sampling modes ■ |
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MIC |
FAST RECOVERY RECTIFIER ▪ Fast switching for high efficiency ▪ Low reverse leakage ▪ High forward surge current capability ▪ High temperature soldering guaranteed 260℃/10 second at terminals DO-213AB(MELF) MECHANICAL DATA ▪ Case: Transfer molded plastic ▪ Epoxy: UL94V-0 r |
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Taiwan Semiconductor Company |
20V P-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET Ordering Information Part No. TSM4433CS RL Package SOP-8 Packi |
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Taiwan Semiconductor Company |
30V N-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● High-Side DC/DC Conversion Notebook Sever Ordering Information Part No. TSM4414CS RL Package SOP-8 Packing T&R N-Channel M |
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Taiwan Semiconductor Company |
30V P-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● Load Switches Notebook PCs Desktop PCs Ordering Information Part No. TSM4425CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel |
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Taiwan Semiconductor |
30V P-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch Ordering Information Part No. TSM4435BCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel P-Chann |
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Taiwan Semiconductor Company |
20V Dual P-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Asynchronous Buck Converter Ordering Information Part No. TSM4433DCS RL Package SOP-8 Packing 2.5Kpcs / 13” |
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Apuls Intergrated Circuits |
VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR including 4-bit ALU, ROM, RAM, I/O ports, timers, clock generator, watchdog timer(WDT), voice synthesizer, etc. It consists of 22 instructions in the device. With CMOS technology and halt function can minimize power dissipation. Its architecture is s |
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MIC |
FAST RECOVERY RECTIFIER ▪ Fast switching for high efficiency ▪ Low reverse leakage ▪ High forward surge current capability ▪ High temperature soldering guaranteed 260℃/10 second at terminals DO-213AB(MELF) MECHANICAL DATA ▪ Case: Transfer molded plastic ▪ Epoxy: UL94V-0 r |
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STMicroelectronics |
TRANSIL PEAK PULSE POWER= 400 W @ 1ms. BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR). JEDEC REGISTRED. SOD 6 (Plastic) . . . . . . DESCRIPTION Transil diodes |
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Dynex Semiconductor |
Single Switch IGBT Module • • • • • 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.0 October 2005 (LN24333) KEY PARAMETE |
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Dynex Semiconductor |
Single Switch IGBT Module • • • • • 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 600A 1200A *(m |
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Taiwan Semiconductor Company |
30V N-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● High-Side DC/DC Conversion Notebook Sever Ordering Information Part No. TSM4404CS RL Package SOP-8 Packing 2.5Kpcs / 13” R |
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Taiwan Semiconductor Company |
N-Channel MOSFET Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Block Diagram Ordering Information Part No. TSM4410CS Packing Package SOP-8 Tape & Reel (2,500pcs / Re |
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Taiwan Semiconductor Company |
25V Dual N-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM4410DCS RL Package SOP-8 Packing 2.5Kpcs / |
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Taiwan Semiconductor |
N-Channel Power MOSFET ● Advanced Trench Technology ● Low On-Resistance ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Package Packing TSM40N03PQ56 RLG PDFN56 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Fr |
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