| No. | Partie # | Fabricant | Description | Fiche Technique |
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Taiwan Semiconductor |
Trench Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
3.0AMPS. Super Fast Rectifiers High efficiency, low VF High current capability High reliability High surge current capability Low power loss For use in low voltage, high frequency inverter, Free wheeling, and polarity protection application Green compound with suffix |
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Silikron Semiconductor Co |
N-Channel MOSFET age Temperature Range 80 70 320 192 2.0 ±20 460 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018D TOP View (TO220) Max. Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdow |
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Silikron Semiconductor Co |
N-Channel MOSFET — — Min. — — Typ. — 7.2 Typ. 1.03 — Max. Units — 10 4.0 — 2 10 100 -100 μA V V S Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source vol |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v |
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Silikron Semiconductor Co |
N-Channel MOSFET ge Temperature Range Max. 60 50 240 147 2.0 ±20 480 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018 TOP View (TO220) Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdown |
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Silikron Semiconductor Co |
Schottky Diode ● MOSFET VDS = -20V,ID = -3.3A RDS(ON) < 180mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● SCHOTTKY VR = 30V, IF = 2A, VF<0.53V @ 1.0A ● High Power and current handing capability ● Lead free product is acquired ● Surface Moun |
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Silikron Semiconductor Co |
PWM applications ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v |
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Taiwan Semiconductor |
3.0AMPS. Super Fast Rectifiers High efficiency, low VF High current capability High reliability High surge current capability Low power loss For use in low voltage, high frequency inverter, Free wheeling, and polarity protection application Green compound with suffix |
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Rectron Semiconductor |
GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 30 Amperes) * * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability Super fast switching speed High reliability Good for switching mode circuit .245 (6.2) .225 (5.7) TO-247 .645 (16.0) .625 (15.9) .085 (2.16) .0 |
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ST Microelectronics |
SGSF313PI |
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ST Microelectronics |
Smartcard MCU With 32 KBytes EEPROM INCLUDING EEPROM FLASH PROGRAM AND RAM FLASH CLEAR 8 BIT TIMER SERIAL ACCESS, ISO 7816-3 COMPATIBLE 3V ± 10% or 5V ± 10% SUPPLY VOLTAGE POWER SAVING STANDBY MODE UP TO 10 MHz INTERNAL OPERATING FREQUENCY CONTACT ASSIGNMENT COMPATIBLE ISO 7816-2 ESD P |
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ST Microelectronics |
(SGSF321 / SGSF421) Fast Switch Hollow Emitter NPN Transistors |
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ON Semiconductor |
Quad 2-Input AND Gate http://onsemi.com • • • • • • • • • • • • • High Speed: tPD = 4.3 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagati |
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Toshiba Semiconductor |
Phase Control Thyristor |
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Silikron Semiconductor Co |
N-Channel MOSFET ssipation Max. 60 50 240 150 2.0 ±20 240 TBD –55 to +150 ْC W W/ْ C V mJ A Units Thermal Resistance Typ. 0.83 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drai |
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Silikron Semiconductor Co |
N-Channel MOSFET issipation Max. 60 50 240 100 2.0 ±20 240 TBD –55 to +150 ْC W W/ْ C V mJ A Units Thermal Resistance Typ. 1.25 — Max. — 62.5 Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS D |
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Silikron Semiconductor Co |
MOSFET ● VDS = 30V,ID = 4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 70mΩ @ VGS=4.5V RDS(ON) < 55mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package S Schematic diagram Marking and pin Assignment A |
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Silikron Semiconductor Co |
MOSFET and Benefits SOT-23 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperat |
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