| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
NXP Semiconductors |
2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start |
|
|
|
|
Fairchild Semiconductor |
Transient Voltage Supressors • Glass passivated junction. • 500W Peak Pulse Power capability on 10/1000 µs waveform. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5. |
|
|
|
|
Micro Electronics |
2SA561 |
|
|
|
|
NXP Semiconductors |
2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start |
|
|
|
|
STMicroelectronics |
General-purpose single bipolar timer ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing from microseconds to hours ■ Operates in both astable and monostable modes ■ Output can source or sink up to 200 mA ■ Adjustable duty cycle ■ TTL compatible ■ Temperature |
|
|
|
|
Micro Electronics |
PNP SILICON TRANSISTOR |
|
|
|
|
Fairchild Semiconductor |
Single Timer • • • • • High Current Drive Capability (200mA) Adjustable Duty Cycle Temperature Stability of 0.005%/°C Timing From µSec to Hours Turn off Time Less Than 2µSec Description The LM555/NE555/SA555 is a highly stable controller capable of producing acc |
|
|
|
|
Toshiba Semiconductor |
Silicon PNP Transistor = -100 mA (Note) hFE (2) VCE = -6 V, IC = -400 mA (Note) VCE (sat) VBE fT Cob IC = -100 mA, IB = -10 mA VCE = -1 V, IC = -100 mA VCE = -6 V, IC = -20 mA VCB = -6 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 70~140, Y: 120~240 hFE (2) clas |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor kdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5; IC= |
|
|
|
|
ON Semiconductor |
Single Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS at VS = "18 V • Input Noise Voltage: 4 nVń ǸHz • DC Voltage Gain: 100000 • AC Voltage Gain: 6000 at 10 kHz • Power Bandwidth: 200 kHz • Slew Rate: 13 V/ms • Large Supply Volta |
|
|
|
|
MIC |
AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS |
|
|
|
|
MIC |
AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS |
|
|
|
|
Microsemi |
Transient Voltage Suppressors of the P5KE5.0 through P5KE170CA series that had also been earlier defined for this same package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Available in both unidirectional and bi-directional const |
|
|
|
|
Microsemi |
Transient Voltage Suppressors of the P5KE5.0 through P5KE170CA series that had also been earlier defined for this same package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Available in both unidirectional and bi-directional const |
|
|
|
|
Microsemi |
Transient Voltage Suppressors of the P5KE5.0 through P5KE170CA series that had also been earlier defined for this same package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Available in both unidirectional and bi-directional const |
|
|
|
|
Central Semiconductor |
COMPLEMENTARY SILICON TRANSISTORS |
|
|
|
|
Digitron Semiconductors |
TRANSIENT VOLTAGE SUPPRESSORS • Available as “HR” (high reliability) screened per MIL‐PRF‐19500, JANTX level. Add “HR” suffix to base part number. • Available Non‐RoHS (standard) or RoHS compliant (add PBF suffix). • For bi‐directional construction, indicate a “C” or “CA” suff |
|
|
|
|
MIC |
AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS |
|
|
|
|
Digitron Semiconductors |
TRANSIENT VOLTAGE SUPPRESSORS • Available as “HR” (high reliability) screened per MIL‐PRF‐19500, JANTX level. Add “HR” suffix to base part number. • Available Non‐RoHS (standard) or RoHS compliant (add PBF suffix). • For bi‐directional construction, indicate a “C” or “CA” suff |
|
|
|
|
Fairchild Semiconductor |
DEVICES FOR BIPOLAR APPLICATIONS • • • • • Glass passivated junction. 500W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5. |
|