| No. | Partie # | Fabricant | Description | Fiche Technique |
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Silan Microelectronics |
3V AM/FM MPX TUNER * Operating supply voltage range: VCC=1.8~7V (Tamb=25°C) * AM detector coil, FM IFT, IF coupling condenser are not needed. * For adopting ceramic discriminator, it is not necessary to adjust the FM quad detector circuit. * Built-in FM MPX VCO circuit |
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Sanyo Semicon Device |
2SA2037 • • • • • 1.0 4.0 1.0 3.3 Adoption of MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 4.8 1 |
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Sanyo Semicon Device |
2SA2210 • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
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Sanyo Semicon Device |
2SA2169 • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte |
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Inchange Semiconductor |
Silicon PNP Power Transistor Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -230V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz fT Current-Gai |
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Fairchild Semiconductor |
Dual-SPDT Analog Switch 0.4Ω Typical On Resistance for +3.0V Supply 0.25Ω Maximum RON Flatness for +3.0V Supply -3db Bandwidth: > 50MHz Low ICCT Current Over Expanded Control Input Range Packaged in 10-Lead UMLP Power-off Protection on Common Ports Broad VCC O |
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ON Semiconductor |
PNP Silicon General Purpose Amplifier Transistor C 1 2 3 MARKING DIAGRAM SOT−723 CASE 631AA F9 M Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simu |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 3 0.5 |
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Inchange Semiconductor |
Silicon PNP Power Transistor itter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 IEBO Emitter Cutoff Current VEB= - |
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Fairchild Semiconductor |
NPN Darlington Transistor unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA28 625 5.0 83.3 200 Max *MMBTA28 350 2.8 357 **PZTA28 1,000 8.0 125 Units mW mW/ °C |
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Allegro MicroSystems |
Audio Amplification Transistor and Benefits ▪ ▪ ▪ ▪ Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –230 V versions available ▪ Complementary to 2SC6011A ▪ Recommended out |
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Sanyo Semiconductor Corporation |
2SA2031 • • • Package Dimensions unit : mm 2022A [2SA2031 / 2SC5669] 3.5 Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. www.DataSheet4U.com 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 1.3 1.2 15.0 20 |
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MIC |
AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS |
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Microsemi |
Transient Voltage Suppressors of the P5KE5.0 through P5KE170CA series that had also been earlier defined for this same package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Available in both unidirectional and bi-directional const |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · Excellent dependence of hFE on current. · High-speed switching. · Micaless package facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note * ( ) : 2SA2023 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee |
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Fairchild Semiconductor |
USB2.0 High-Speed (480Mbps) and Audio Switches HS-USB: 4 Ω Typical On Resistance HS-USB: 4.5 pF Typical On Capacitance Audio: 3 Ω Typical On Resistance -3 db Bandwidth: > 720 MHz Low Power Consumption Power-off Protection on Common D+/R, D-/L Ports Automatically Detects VCC for Swit |
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ON Semiconductor |
Bipolar Transistor • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage C |
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