No. | Partie # | Fabricant | Description | Fiche Technique |
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Jingdao Microelectronics |
3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER • Glass Passivated Chip Junction • Reverse Voltage - 100 to 1000 V • Forward Current - 3.0 A • Fast reverse recovery time • Designed for Surface Mount Application PINNING PIN DESCRIPTION 1 Input Pin(~) 2 Input Pin(~) 3 Output Anode(+) 4 Output Cath |
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Microsemi |
Glass Passivated Single Phase Rectifier Bridge y Blocking voltage:800 to 1800V y Low forward voltage drop y Glass passivated chip Advantages y Easy to mount y Space and weight savings VRRM 800V 1200V 1600V 1800V VRSM 900V 1300V 1700V 1900V Conditions Tc=100℃ t=10mS Tvj =45℃ a.c.50HZ;r.m.s.;1mi |
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MIC |
3A Surface Mount Glass Passivated Bridge Rectifier 6 9 0D[LPXP'&%ORFNLQJ9ROWDJH 9'& 9 $YHUDJH5HFWLILHG2XWSXW&XUUHQW ,2 3HDN)RUZDUG6XUJH&XUUHQWPV6LQJOH+DOI6LQH :DYH6XSHULPSRVHGRQ5DWHG/RDG ,)60 -('(& |
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MIC |
3A Surface Mount Glass Passivated Bridge Rectifier 6 9 0D[LPXP'&%ORFNLQJ9ROWDJH 9'& 9 $YHUDJH5HFWLILHG2XWSXW&XUUHQW ,2 3HDN)RUZDUG6XUJH&XUUHQWPV6LQJOH+DOI6LQH :DYH6XSHULPSRVHGRQ5DWHG/RDG ,)60 -('(& |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Collector-Base Voltage V(BR)CBO Collector-Emitter Voltage V(BR)CEO Emitter-Base Voltage V(BR)EBO Collector Current − Continuous IC Electrostatic Discharge ESD Va |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Electrostatic Di |
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MIC |
3A Surface Mount Glass Passivated Bridge Rectifier 6 9 0D[LPXP'&%ORFNLQJ9ROWDJH 9'& 9 $YHUDJH5HFWLILHG2XWSXW&XUUHQW ,2 3HDN)RUZDUG6XUJH&XUUHQWPV6LQJOH+DOI6LQH :DYH6XSHULPSRVHGRQ5DWHG/RDG ,)60 -('(& |
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Jingdao Microelectronics |
3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER • Glass Passivated Chip Junction • Reverse Voltage - 100 to 1000 V • Forward Current - 3.0 A • High Surge Current Capability • Designed for Surface Mount Application MECHANICAL DATA • Case: UMSB • Terminals: Solderable per MIL-STD-750, Method 2026 |
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Jingdao Microelectronics |
3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER • Glass Passivated Chip Junction • Reverse Voltage - 100 to 1000 V • Forward Current - 3.0 A • High Surge Current Capability • Designed for Surface Mount Application MECHANICAL DATA • Case: UMSB • Terminals: Solderable per MIL-STD-750, Method 2026 |
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MIC |
3A Surface Mount Glass Passivated Bridge Rectifier 6 9 0D[LPXP'&%ORFNLQJ9ROWDJH 9'& 9 $YHUDJH5HFWLILHG2XWSXW&XUUHQW ,2 3HDN)RUZDUG6XUJH&XUUHQWPV6LQJOH+DOI6LQH :DYH6XSHULPSRVHGRQ5DWHG/RDG ,)60 -('(& |
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MIC |
3A Surface Mount Glass Passivated Bridge Rectifier 6 9 0D[LPXP'&%ORFNLQJ9ROWDJH 9'& 9 $YHUDJH5HFWLILHG2XWSXW&XUUHQW ,2 3HDN)RUZDUG6XUJH&XUUHQWPV6LQJOH+DOI6LQH :DYH6XSHULPSRVHGRQ5DWHG/RDG ,)60 -('(& |
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MIC |
3A Surface Mount Glass Passivated Bridge Rectifier 6 9 0D[LPXP'&%ORFNLQJ9ROWDJH 9'& 9 $YHUDJH5HFWLILHG2XWSXW&XUUHQW ,2 3HDN)RUZDUG6XUJH&XUUHQWPV6LQJOH+DOI6LQH :DYH6XSHULPSRVHGRQ5DWHG/RDG ,)60 -('(& |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Electrostatic |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Electrostatic |
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Micro Electronics |
BLINKING LED LAMPS |
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Jingdao Microelectronics |
3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER • Glass Passivated Chip Junction • Reverse Voltage - 100 to 1000 V • Forward Current - 3.0 A • Fast reverse recovery time • Designed for Surface Mount Application PINNING PIN DESCRIPTION 1 Input Pin(~) 2 Input Pin(~) 3 Output Anode(+) 4 Output Cath |
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ON Semiconductor |
PNP General Purpose Amplifier Transistor Surface Mount • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS Symbol V(BR)CBO V(BR)CEO V(BR)EB |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Electrostatic Di |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Collector-Base Voltage V(BR)CBO Collector-Emitter Voltage V(BR)CEO Emitter-Base Voltage V(BR)EBO Collector Current − Continuous IC Electrostatic Discharge ESD Va |
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