| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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ON Semiconductor |
Zener Voltage Regulators • 500 mW Rating on FR−4 or FR−5 Board • Wide Zener Reverse Voltage Range − 2.4 V to 110 V @ Thermal Equilibrium* • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications • General Purpose, Medium Curr |
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ON Semiconductor |
High Voltage Switching Diode AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol V |
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ON Semiconductor |
Switching Diode • SOD−123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−F |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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Hynix Semiconductor |
240pin DDR3 SDRAM Unbuffered DIMMs and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51 |
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Microchip |
DC-20GHz GaAs MMIC SP2T Non-Reflective Switch • Wide operating range: DC –20 GHz Functional Block Diagram • Low insertion loss: <2 dB • High input P1dB: 24 dBm • Excellent isolation: >40 dB • High input IP3: 42 dBm • Fast switching: <10 ns • Non-reflective topology • Compact die size: 0.85 mm × |
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Microsemi |
DC-20GHz GaAs MMIC SP2T Non-Reflective Switch ....................................................................................................................................... 2 3 Electrical Specifications .................................................................................... |
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ON Semiconductor |
Switching Diode SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v |
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MIC |
SURFACE MOUNT ZENER DIODE : Wide Zener Voltage Range Selection, 2.0V to 75V VZ Tolerance Selection of ±2% (B Series) Flat Lead SOD-123 Plastic Package Surface Device Type Mounting RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Band Indicates Cathode SOD-1 |
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Micron Technology |
(MT18LD272A / MT18LD472A) NONBUFFERED DRAM DIMMs • JEDEC-standard, eight-CAS#, ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 16MB (2 Meg x 72) and 32MB (4 Meg x 72) • Nonbuffered • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • All inputs, outputs and |
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Micron Technology |
(MT16LSDT864A / MT16LSDT1664A) SDRAM DIMMs |
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EIC discrete Semiconductors |
(MMSZxx) ZENER DIODES : www.DataSheet4U.com ZENER DIODES SOD-123 2.7 2.6 0.6 0.5 * Total Power Dissipation 500 mW on FR-4 or FR-5 Board * Wide Zener Reverse Voltage Range 2.4 V to 75 V * Package Designed for Optimal Automated Board Assembly * Small Package Size for High |
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Hynix Semiconductor |
240pin DDR3 SDRAM Unbuffered DIMMs and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51 |
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Hynix Semiconductor |
240pin DDR3 SDRAM Unbuffered DIMMs and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51 |
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Microsemi |
PASSIVE DEVICES - MMSM Capacitors Low parasitics LP = 0.02nH Typical CP = 0.04pF Typical Surface Mount design Broadband Performance through X-Band Available on Tape & Reel for automated pick & place assembly Small, SOD 323 Footprint This series of surface mount capacitors |
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