| No. | Partie # | Fabricant | Description | Fiche Technique |
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Summit Microelectronics |
Three-channel Programmable DC-DC System Power Managers & APPLICATIONS • Digital programming of all major parameters via I2C interface and non-volatile memory • Output voltage set point • Input/battery voltage monitoring • Output power-up/down sequencing • Dynamic voltage control of all outputs • UV/OV mo |
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Allegro Microsystems |
Schottky Barrier Diodes 17 15 12 8 4 4 4 2.5 4 4 4 4 4 2 4 4 4 2 4 4 2 Mass (g) 0.009 79 0.072 0.072 80 0.072 0.072 0.29 0.29 0.29 0.13 0.13 0.3 83 0.3 0.45 84 0.6 1.2 2.1 2.1 2.1 1.04 2.1 2.1 2.1 87 2.1 2.1 5.5 2.1 2.1 2.1 5.5 2.1 2.1 5.5 89 91 87 89 87 90 — 88 90 82 87 8 |
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Siemens Semiconductor Group |
PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Pin Definitions and Function |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.5V to 440V. ▪ Peak power dissipation 600W @10 x 1000 us Pulse ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direction. Less than 5 ns for |
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ON Semiconductor |
600 Watt Peak Power Zener Transient Voltage Suppressors • Working Peak Reverse Voltage Range − 5.8 to 171 V • Standard Zener Breakdown Voltage Range − 6.8 to 200 V • Peak Power − 600 W @ 1 ms • ESD Rating of Class 3 (>16 kV) per Human Body Model • Maximum Clamp Voltage @ Peak Pulse Current • Low Leakage |
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Siemens Semiconductor Group |
PLL-Frequency Synthesizer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Pin Definitions and Function |
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Microsemi Corporation |
(MB200 - MB213) RECTIFIERS |
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MIC GROUP RECTIFIERS |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR • • • • • • • • • • • Stand-off Voltage Peak Pulse Power 5.0 to 170 Volts 600 Watts Plastic package has Underwriters Laboratory Flammability Classification 94V-O For surface mounted applications in order to optimize board space Low profile package B |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.5V to 440V. ▪ Peak power dissipation 600W @10 x 1000 us Pulse ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direction. Less than 5 ns for |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.5V to 440V. ▪ Peak power dissipation 600W @10 x 1000 us Pulse ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direction. Less than 5 ns for |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.5V to 440V. ▪ Peak power dissipation 600W @10 x 1000 us Pulse ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-direction. Less than 5 ns for |
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Microchip |
8/10/12-bit Digital-to-Analog Converters • Memory Options: - Volatile Memory: MCP47CVBXX - Nonvolatile Memory: MCP47CMBXX • Operating Voltage Range: - 2.7V to 5.5V – Full specifications - 1.8V to 2.7V – Reduced device specifications • Output Voltage Resolutions: - 8-bit: MCP47CXB0X (256 ste |
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Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMB200 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMB200 PNP Multi-Chip General Purpose Amplifier (continued) Electrical Character |
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Fairchild Semiconductor |
NPN Amplifier 2222A — NPN Multi-Chip General-Purpose Amplifier Ordering Information Part Number FFB2222A FMB2222A MMPQ2222A Top Mark .1P .1P MMPQ2222A Package SC70 6L SSOT 6L SOIC 16L Packing Method Tape and Reel Tape and Reel Tape and Reel Absolute Maximum R |
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Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier e consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Ef |
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General Semiconductor |
SURFACE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.203) MAX. ♦ Plastic package has Underwriters Labora |
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Fairchild Semiconductor |
MOSFET Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm HBM ESD protection level 2.8 kV (Note 3) RoHS Compliant General Descrip |
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ON Semiconductor |
0.5A Bridge Rectifiers make the MB family ideal for small power supplies that need a little extra surge capability. For higher IFAV current ratings, lower profile packaging, or lower VF values, explore the onsemi MDB family of bridge rectifiers. For improved VF and efficie |
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Fairchild Semiconductor |
0.5A Bridge Rectifiers • Low-Leakage • Surge Overload Rating: 35 A peak • Ideal for Printed Circuit Board • UL Certified: UL #E258596 SOIC-4 Polarity symbols molded or mark on body 43 ~~ ++ ~+ ~- 12 Ordering Informations Part Number MB1S MB2S MB4S MB6S MB8S Marking MB1 |
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Murata Manufacturing |
HIGH FREQUENCY CERAMIC CAPACITORS I Packaging options I Lot processing data available MA SERIES For filtering, coupling and impedance matching in most RF circuits, the MA Series chips and leaded devices offer outstanding performance and reliability with the greatest range of values |
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