| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
IRFR120N • 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Silan Microelectronics |
200V SUPER-FAST RECOVERY RECTIFIER ∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 175 °C Operating Junction Temperature NOMENCLATURE ORDERING SPECIFICATIONS Part No. SFR12S20T SFR12S20F Package TO-220-3L TO-220F-3L Marking SFR12S20T SFR1 |
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Silan Microelectronics |
200V SUPER-FAST RECOVERY RECTIFIER ∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 175 °C Operating Junction Temperature NOMENCLATURE ORDERING SPECIFICATIONS Part No. SFR16S20T SFR16S20F Package TO-220-3L TO-220F-3L Marking SFR16S20T SFR1 |
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MIC |
SOFT RECOVERY FAST SWITCHING RECTIFIER • Low coat construction • Fast switching for high efficency. • Low reverse leakage • High forward surge current capability • High temperature soldering guaranteed: 260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension MECHANICAL DATA • Case: |
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Micro Commercial Components |
1 Amp Glass Passivated Rectifier 50 to 1000 Volts • • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# FR101GP THRU FR107GP 1 Amp Glass Passivated Rectifier 50 to 1000 Volts DO-41 Low Cost Low Leakage Low Forward Voltage Dr |
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Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes IF£¨ AV£© VRRM trr¢Ù¡Ü 0.15¦Ì ¸ß¿ÉÐÔ 1.0A 50V~1000V 0.25¦Ì s£¬ 0.5¦Ì s High reliability ÍâÐÎ³ß´çº Ó¡ › Outline Dimensions and Mark »Î † Unit£º mm s£¬ Ø“˜OÕI˜Ë Cathode Mark ÐÍÌ – Type ¡ö ¡ñ ÓÃ; ¿ìËÙÕûÁ÷Óà Applications High speed switching ¦µ |
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Naina Semiconductor |
SILICON POWER DIODES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te=1400C Maximum peak forw |
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Naina Semiconductor |
SILICON POWER DIODES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te=1400C Maximum peak forw |
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Taiwan Semiconductor |
Glass Passivated Fast Recovery Rectifiers Low forward voltage drop High current capability High reliability High surge current capability TO-220 Mechanical Data Cases: TO-220 molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Leads solderable per MIL-STD-202, Method 208 guarant |
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Taiwan Semiconductor |
1.0 AMP. Soft Fast Recovery Rectifiers 1.0 AMP. Soft Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere DO-41 a Low forward voltage drop a High current capability a High reliability a High surge current capability a Fast switching for high efficiency Mechanical D |
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Taiwan Semiconductor |
1.0 AMP. Soft Fast Recovery Rectifiers 1.0 AMP. Soft Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere DO-41 a Low forward voltage drop a High current capability a High reliability a High surge current capability a Fast switching for high efficiency Mechanical D |
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Silan Microelectronics |
400V ULTRA-FAST RECOVERY RECTIFIER 1B Ultrafast 35 Nanosecond Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current NOMENCLATURE ORDERING INFORMATION Part No. Package SFR10S40AD SFR10S40ADTR SFR10S40AS SFR10S40ASTR TO-252-2L TO-252-2L TO-263-2L TO-263-2L Marki |
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Micro Commercial Components |
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts • • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# FR1012GP THRU FR1020GP 1 Amp Glass Passivated Rectifier 1200 to 2000 Volts DO-41 Low Cost Low Leakage Low Forward Voltag |
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Micro Commercial Components |
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts • • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# FR1012GP THRU FR1020GP 1 Amp Glass Passivated Rectifier 1200 to 2000 Volts DO-41 Low Cost Low Leakage Low Forward Voltag |
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Taiwan Semiconductor |
16.0 AMPS. Glass Passivated Fast Recovery Rectifiers Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: TO-220AB molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin p |
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Fairchild Semiconductor |
Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M |
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Sangdest Microelectronics |
FAST RECOVERY RECTIFIERS • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 • Fast switching for high efficiency • Low reverse leakage • High forward surge current capability • High temperature soldering guaranteed: 260 C/10 seconds,0.37 |
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Naina Semiconductor |
SILICON POWER DIODES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te=1400C Maximum peak forw |
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Naina Semiconductor |
SILICON POWER DIODES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te=1400C Maximum peak forw |
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Naina Semiconductor |
SILICON POWER DIODES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te=1400C Maximum peak forw |
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