No. | Partie # | Fabricant | Description | Fiche Technique |
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Thinki Semiconductor |
High Voltage Silicon Diode • Low forward voltage drop • High current capability • High surge current capability .034(.86) • Case: Molded plastic, DO-41 • Epoxy: UL 94V-0 rate flame retardant • Lead: Axial leads, solderable per MIL-STD-202 method 208 guaranteed • Polarity: Co |
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Diotec Semiconductor |
Silicon Rectifiers ion temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s – 50…+175/C – 50…+175/C 1 ) Valid, if leads are kept at ambient temp |
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Diotec Semiconductor |
Silicon-Bridge Rectifiers mperatur Storage temperature – Lagerungstemperatur Tj TS – 50...+150°C – 50...+150°C 1 2 ) Valid for one branch – Gültig für einen Brückenzweig ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Ans |
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Diotec Semiconductor |
Silicon Rectifiers 50 A2s Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle R |
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Diotec Semiconductor |
Silicon Rectifiers 50…+150/C – 50…+150/C < 25 K/W 1) Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistance junctio |
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Diotec Semiconductor |
Silicon-Bridge Rectifiers mperatur Storage temperature – Lagerungstemperatur Tj TS – 50...+150°C – 50...+150°C 1 2 ) Valid for one branch – Gültig für einen Brückenzweig ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Ans |
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Diotec Semiconductor |
Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at |
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Diotec Semiconductor |
Silicon Rectifiers ion temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s – 50…+175/C – 50…+175/C 1 ) Valid, if leads are kept at ambient temp |
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Diotec Semiconductor |
Silicon Rectifiers 50 A2s Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle R |
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MIC |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER • • • • • VOLTAGE RANGE CURRENT 1250 to 1300 Volts 1.0 Ampere DO-41 1.0(25.4) MIN. Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 260℃/10 secods/.375 |
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Thinki Semiconductor |
High Voltage Silicon Diode • Low forward voltage drop • High current capability • High surge current capability .034(.86) • Case: Molded plastic, DO-41 • Epoxy: UL 94V-0 rate flame retardant • Lead: Axial leads, solderable per MIL-STD-202 method 208 guaranteed • Polarity: Co |
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Diotec Semiconductor |
High Voltage Si-Rectifiers |
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Diotec Semiconductor |
Silicon Rectifiers ion temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s – 50…+175/C – 50…+175/C 1 ) Valid, if leads are kept at ambient temp |
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EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANI |
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MIC |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER • • • • • VOLTAGE RANGE CURRENT 1250 to 1300 Volts 1.0 Ampere DO-41 1.0(25.4) MIN. Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 260℃/10 secods/.375 |
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Token |
Ceramic Filters : Center frequency range between 450~470kHz are available standard tolerance of ±2kHz. Insert Loss (dB) max 5.0 db. Token Ceramic Filters for AM are Compatible Murata SFU450/455kHz. Token ceramic filters are primarily designed for piezoelectric l |
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SBtron |
CERAMIC FILTER |
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