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MIC BY1 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BY127

Thinki Semiconductor
High Voltage Silicon Diode

• Low forward voltage drop
• High current capability
• High surge current capability .034(.86)
• Case: Molded plastic, DO-41
• Epoxy: UL 94V-0 rate flame retardant
• Lead: Axial leads, solderable per MIL-STD-202 method 208 guaranteed
• Polarity: Co
Datasheet
2
BY134

Diotec Semiconductor
Silicon Rectifiers
ion temperature
  – Sperrschichttemperatur Storage temperature
  – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s
  – 50…+175/C
  – 50…+175/C 1 ) Valid, if leads are kept at ambient temp
Datasheet
3
BY164

Diotec Semiconductor
Silicon-Bridge Rectifiers
mperatur Storage temperature
  – Lagerungstemperatur Tj TS
  – 50...+150°C
  – 50...+150°C 1 2 ) Valid for one branch
  – Gültig für einen Brückenzweig ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Ans
Datasheet
4
BY1600

Diotec Semiconductor
Silicon Rectifiers
50 A2s Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle R
Datasheet
5
BY16

Diotec Semiconductor
Silicon Rectifiers
50…+150/C
  – 50…+150/C < 25 K/W 1) Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Operating junction temperature
  – Sperrschichttemperatur Storage temperature
  – Lagerungstemperatur Thermal resistance junctio
Datasheet
6
BY179

Diotec Semiconductor
Silicon-Bridge Rectifiers
mperatur Storage temperature
  – Lagerungstemperatur Tj TS
  – 50...+150°C
  – 50...+150°C 1 2 ) Valid for one branch
  – Gültig für einen Brückenzweig ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Ans
Datasheet
7
BY127

Diotec Semiconductor
Silicon Rectifiers
titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing
  – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at
Datasheet
8
BY135

Diotec Semiconductor
Silicon Rectifiers
ion temperature
  – Sperrschichttemperatur Storage temperature
  – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s
  – 50…+175/C
  – 50…+175/C 1 ) Valid, if leads are kept at ambient temp
Datasheet
9
BY1800

Diotec Semiconductor
Silicon Rectifiers
50 A2s Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle R
Datasheet
10
BY127

MIC
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER





• VOLTAGE RANGE CURRENT 1250 to 1300 Volts 1.0 Ampere DO-41 1.0(25.4) MIN. Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 260℃/10 secods/.375
Datasheet
11
BY133

Thinki Semiconductor
High Voltage Silicon Diode

• Low forward voltage drop
• High current capability
• High surge current capability .034(.86)
• Case: Molded plastic, DO-41
• Epoxy: UL 94V-0 rate flame retardant
• Lead: Axial leads, solderable per MIL-STD-202 method 208 guaranteed
• Polarity: Co
Datasheet
12
BY12

Diotec Semiconductor
High Voltage Si-Rectifiers
Datasheet
13
BY133

Diotec Semiconductor
Silicon Rectifiers
ion temperature
  – Sperrschichttemperatur Storage temperature
  – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s
  – 50…+175/C
  – 50…+175/C 1 ) Valid, if leads are kept at ambient temp
Datasheet
14
BY133G

EIC discrete Semiconductors
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
: * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANI
Datasheet
15
BY133

MIC
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER





• VOLTAGE RANGE CURRENT 1250 to 1300 Volts 1.0 Ampere DO-41 1.0(25.4) MIN. Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 260℃/10 secods/.375
Datasheet
16
LTP450BY1

Token
Ceramic Filters
:
 Center frequency range between 450~470kHz are available standard tolerance of ±2kHz.
 Insert Loss (dB) max 5.0 db. Token Ceramic Filters for AM are Compatible Murata SFU450/455kHz. Token ceramic filters are primarily designed for piezoelectric l
Datasheet
17
S-LTP450BY1

SBtron
CERAMIC FILTER
Datasheet



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