No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi |
(1N5550 / 1N5551 / 1N5552 / 1N5553 / 1N5554) 554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die. 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines. Col. 1 Type Col. 2 V(BR) Col. 3 VRWM and V(BR)min Col. 4 IO1 TL = +55°C; L = .375 inch ( |
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ON Semiconductor |
Zener Diodes Industries, LLC, 2018 1 November, 2023 − Rev. 5 Publication Order Number: 1N5221B/D 1N5221B − 1N5252B ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. VZ (V) @ IZ (Note 2) Device Min. Typ. Max. ZZ (W) @ IZ (mA) |
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Fairchild Semiconductor |
Schottky Barrier Rectifier • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* TA = 25°C u |
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ON Semiconductor |
SCHOTTKY BARRIER RECTIFIER chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely L |
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Digitron Semiconductors |
3 WATT ZENER DIODES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Operating Temperature |
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Digitron Semiconductors |
1.5 WATT ZENER DIODES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic Symbol DC p |
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Digitron Semiconductors |
3 WATT ZENER DIODES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Operating Temperature |
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ON Semiconductor |
SCHOTTKY BARRIER RECTIFIER chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely L |
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Microsemi |
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very s |
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Seme LAB |
SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS mb = 25°C Tamb = 25°C Tamb = 25°C Tamb = 25°C f = 1MHZ Tamb = 25°C IF = 5mA VR = 50V IF = 1mA IF = 15mA IR = 10mA VR = 0V Min. Typ. Max. 0.2 0.41 1 Unit m A V V 70 2 100 PF ps * Pulse test £ 300ms , d £ 2% Semelab plc. Telephone +44(0)1455 |
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Microsemi |
Silicon 5 Watt Zener Diodes • JEDEC registered 1N5333 thru 1N5388 series. • Zener voltage available 3.3 V to 200 V. • Plus/minus 10%, 5% and 2% voltage tolerances are available. (See part nomenclature block.) • RoHS compliant versions available. APPLICATIONS / BENEFITS • Regula |
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MIC |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER ▪ Glass passivated chip junction ▪ Low forward voltage drop ▪ Low reverse leakage ▪ High forward surge current capability ▪ High temperature soldering guaranteed 260 /10 seconds,0.375”(9.5mm)lead length at 5 lbs(2.3kg) tension MECHANICAL DATA ▪ Case: |
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Microsemi |
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very s |
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Microsemi |
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very s |
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ON Semiconductor |
Axial Lead Rectifiers chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Features •ăExtremely L |
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Microsemi |
METALLURGICALLY BONDED GLASS SURFACE MOUNT 500mW ZENERS • Surface mount equivalent of JEDEC registered 1N5221 thru 1N5281 series. • Voltage tolerances of 10%, 5%, 2%, and 1% available. • Hermetically sealed surface mount package. • Internal metallurgical bond. • Up-screening in reference to MIL |
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AiT Semiconductor |
SCHOTTKY DIODES ⚫ Metal silicon junction, majority carrier conduction ⚫ Guarding for overvoltage protection ⚫ Low power loss, high efficiency ⚫ High current capability ⚫ low forward voltage drop ⚫ High surge capability ⚫ For use in low voltage, high frequency invert |
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Digitron Semiconductors |
3 WATT ZENER DIODES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Operating Temperature |
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Rectron Semiconductor |
SILICON RECTIFIER * Low cost * Low leakage * Low forward voltage drop * High current capability MECHANICAL DATA * Case: Molded plastic * Epoxy: Device has UL flammability classification 94V-O * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weig |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03% |
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