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MIC 1N5 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
JANTX1N5552

Microsemi
(1N5550 / 1N5551 / 1N5552 / 1N5553 / 1N5554)
554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die. 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines. Col. 1 Type Col. 2 V(BR) Col. 3 VRWM and V(BR)min Col. 4 IO1 TL = +55°C; L = .375 inch (
Datasheet
2
1N5221B

ON Semiconductor
Zener Diodes
Industries, LLC, 2018 1 November, 2023 − Rev. 5 Publication Order Number: 1N5221B/D 1N5221B − 1N5252B ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. VZ (V) @ IZ (Note 2) Device Min. Typ. Max. ZZ (W) @ IZ (mA)
Datasheet
3
1N5819

Fairchild Semiconductor
Schottky Barrier Rectifier

• 1.0 ampere operation at TA = 90°C with no thermal runaway.
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* TA = 25°C u
Datasheet
4
1N5817

ON Semiconductor
SCHOTTKY BARRIER RECTIFIER
chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features
• Extremely L
Datasheet
5
1N5070

Digitron Semiconductors
3 WATT ZENER DIODES

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Operating Temperature
Datasheet
6
1N5930A

Digitron Semiconductors
1.5 WATT ZENER DIODES

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic Symbol DC p
Datasheet
7
1N5076

Digitron Semiconductors
3 WATT ZENER DIODES

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Operating Temperature
Datasheet
8
1N5819

ON Semiconductor
SCHOTTKY BARRIER RECTIFIER
chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features
• Extremely L
Datasheet
9
1N5656

Microsemi
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR
section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very s
Datasheet
10
1N5711CSM

Seme LAB
SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
mb = 25°C Tamb = 25°C Tamb = 25°C Tamb = 25°C f = 1MHZ Tamb = 25°C IF = 5mA VR = 50V IF = 1mA IF = 15mA IR = 10mA VR = 0V Min. Typ. Max. 0.2 0.41 1 Unit m A V V 70 2 100 PF ps * Pulse test £ 300ms , d £ 2% Semelab plc. Telephone +44(0)1455
Datasheet
11
1N5370B

Microsemi
Silicon 5 Watt Zener Diodes

• JEDEC registered 1N5333 thru 1N5388 series.
• Zener voltage available 3.3 V to 200 V.
• Plus/minus 10%, 5% and 2% voltage tolerances are available. (See part nomenclature block.)
• RoHS compliant versions available. APPLICATIONS / BENEFITS
• Regula
Datasheet
12
1N5406G

MIC
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
▪ Glass passivated chip junction ▪ Low forward voltage drop ▪ Low reverse leakage ▪ High forward surge current capability ▪ High temperature soldering guaranteed 260 /10 seconds,0.375”(9.5mm)lead length at 5 lbs(2.3kg) tension MECHANICAL DATA ▪ Case:
Datasheet
13
1N5652

Microsemi
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR
section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very s
Datasheet
14
1N5647

Microsemi
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR
section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very s
Datasheet
15
1N5822

ON Semiconductor
Axial Lead Rectifiers
chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Features
•ăExtremely L
Datasheet
16
1N5268BUR-1

Microsemi
METALLURGICALLY BONDED GLASS SURFACE MOUNT 500mW ZENERS

• Surface mount equivalent of JEDEC registered 1N5221 thru 1N5281 series.
• Voltage tolerances of 10%, 5%, 2%, and 1% available.
• Hermetically sealed surface mount package.
• Internal metallurgical bond.
• Up-screening in reference to MIL
Datasheet
17
1N5817W

AiT Semiconductor
SCHOTTKY DIODES

⚫ Metal silicon junction, majority carrier conduction
⚫ Guarding for overvoltage protection
⚫ Low power loss, high efficiency
⚫ High current capability
⚫ low forward voltage drop
⚫ High surge capability
⚫ For use in low voltage, high frequency invert
Datasheet
18
1N5114

Digitron Semiconductors
3 WATT ZENER DIODES

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Operating Temperature
Datasheet
19
1N5395

Rectron Semiconductor
SILICON RECTIFIER
* Low cost * Low leakage * Low forward voltage drop * High current capability MECHANICAL DATA * Case: Molded plastic * Epoxy: Device has UL flammability classification 94V-O * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weig
Datasheet
20
1N5148A

Knox SemiconductorInc
GENERAL PURPOSE ABRUPT VARACTOR DIODES
tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03%
Datasheet



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