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MCC |
P-Channel Enhancement Mode Field Effect Transistor • • • • • • • • • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance J |
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MCC |
N-Channel Enhancement Mode Field Effect Transistor omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2306 • Halogen free available upon request by adding suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS C |
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MCC |
N-channel MOSFET • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compli |
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MCC |
N-channel FET Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4939 SI2304 • Halogen free available upon request by adding suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complia |
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MCC |
N-channel FET • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High power and current handing capability • Surface mount package • Marking Code: S10 N-Channel Enhancement Mod |
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MCC |
N-Channel MOSFET • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • TrenchFET Power MOSFET • Load Switch for Portable Devices • Marking Code: S12 N-Channel Enhancement Mode Field |
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MCC |
N-Channel MOSFET • Halogen free available upon request by adding suffix "-HF" • 20V,4.5A, RDS(ON)<25m¡@VGS=4.5V RDS(ON)<35m¡@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Epoxy m |
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MCC |
P-Channel Enhancement Mode Field Effect Transistor • • • • • • • • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Jun |
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MCC |
P-Channel MOSFET • Halogen free available upon request by adding suffix "-HF" • -20V,-2.9A, RDS(ON)=57mΩ@VGS=-4.5V RDS(ON)=76mΩ@VGS=-2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • High Speed Switching • SOT-23 Package • Marking Code: |
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MCC |
N-Channel MOSFET • Trench Power LV MOSFET Technology • High Power and Current Handing Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix "-HF" • Lead Free Finish/RoHS Compliant |
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MCC |
P-Channel Enhancement Mode Field Effect Transistor • Halogen free available upon request by adding suffix "-HF" • TrenchFET Power Mosfet • Excellent RDS(ON) • Marking Code: S33 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 P-Channel Enhancement Mode Field Effect Transist |
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MCC |
N-Channel MOSFET • TrenchFET Power MOSFET • Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. Se |
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MCC |
P-Channel Enhancement Mode Field Effect Transistor • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • TrenchFET Power MOSFET • Marking Code: S7 P-Channel Enhancement Mode Field Effect Transistor Maximum Ratings @ |
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MCC |
P-Channel MOSFET Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter SOT-23 Package Marking Code: S5 P-Channel Enha |
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MCC |
P-Channel MOSFET • Halogen free available upon request by adding suffix "-HF" • -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • High Speed Switching • SOT-23 Package • Epoxy meets |
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MCC |
N-Channel MOSFET • Halogen free available upon request by adding suffix "-HF" • TrenchFET Power Mosfet • Low RDS(ON) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 N-Channel Enhancement Mode Field Effect Transistor Maximum Ratings @ 25 C |
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MCC |
N-Channel MOSFET • Halogen free available upon request by adding suffix "-HF" • 20V,3.0A, RDS(ON)=55m¡@VGS=4.5V RDS(ON)=82m¡@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Epoxy me |
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MCC |
P-Channel MOSFET • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • TrenchFET MOSFET • Low RDSON P-Channel Enhancement Mode Field Effect Transistor Maximum Ratings @ 25OC Unless |
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