| No. | Partie # | Fabricant | Description | Fiche Technique |
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MACOM |
25W High Power RF LDMOS FET include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE |
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MACOM |
50W High Power RF LDMOS FET include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Effici |
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MACOM |
Thermally-Enhanced High Power RF LDMOS FET a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak/Average |
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