MA-COM DS- fiche technique

No.	Partie #	Fabricant	Description
1	SIM300	Simcom	AT Commands Set and the using or communication of the contents thereof, are forbidden without express authority. Offenders are liable to the payment of damages. All rights reserved in the event of grant of a patent or the registration of a utility model or design.
2	MAADSS0009	MACOM	Digital Attenuator  Attenuation 2-dB Steps to 30 dB  High Accuracy  Low Intermodulation Product: +50 dBm IP3  Low DC Power Consumption: 50 µW  Temperature Stability +/-0.15 dB: -40°C to +85°C  Lead-Free SOIC-16 Plastic Package  100% Matte Tin Plating over Copper
3	MDS-222	MA-COM	Surface Mount Double-Balanced Mixer  Fully Hermetic Package  Three Decade Coverage  Impedance: 50 Ohms Nominal  Maximum Input Power: 400 mW Max, Derated to 85°C @ 3.2 mW/°C  X Port Current: 50 mA Max.  MIL-STD-883 Screening Available SF-1 Rev. V4 Description Transformers conve
4	MAADSS0014	MACOM	Digital Attenuator • Integrated Logic • Positive Single Control • Insertion Loss: 1.3 dB @ 1.0 GHz • IP3: 42 dBm typical @ 2.0 GHz • Attenuation Accuracy: 0.2 dB + 2% @ 1.0 GHz • 2-dB Attenuation Steps to 30 dB • Low DC Power Consumption • Lead-Free 3mm PQFN-16LD Plast
5	MADS-011010-1419	MA-COM	Schottky Zero Bias Detector Diode Chip • P-Type Schottky Diode • Can be used Without External DC Bias • Large Bondable Contact • RoHs Compliant • Available in Chip Form (ODS-1419) • Can be Mounted with Solder or Conductive Epoxy. Description M/A-COM Technology Solutions’ MADS-011010-1419
6	MBC50-1.0B14	MA-COM	MNOS Series Capacitor Beam Leads  Low Leakage Current  Low Insertion Loss  Excellent Long Term Stability Description The MBC50-x Series capacitors utilize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low lea
7	MBC50-6B12	MA-COM	MNOS Series Capacitor Beam Leads  Low Leakage Current  Low Insertion Loss  Excellent Long Term Stability Description The MBC50-x Series capacitors utilize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low lea
8	MADS-001318-1197HP	MA-COM	GaAs Flip Chip Schottky Barrier Diodes  Low Series Resistance  Low Capacitance  High Cutoff Frequency  Silicon Nitride Passivation  Polyimide Scratch Protection  Designed for Easy Circuit Insertion Rev. V11 MA4E1317 Description and Applications The MA4E1317 single, MA4E1318 anti-p
9	DS1501	Maxim Integrated	Y2K-Compliant Watchdog Real-Time Clocks  BCD-Coded Century, Year, Month, Date, Day, Hours, Minutes, and Seconds with Automatic Leap-Year Compensation Valid Up to the Year 2100  Programmable Watchdog Timer and RTC Alarm  Century Register; Y2K-Compliant RTC  +3.3 (W) or +5V (Y) Operation
10	HDSP-703A	Broadcom	5x7 Dot Matrix Alphanumeric Display  5 × 7 dot matrix font  Viewable up to 12 meters  X-Y stackable  Industry-standard pinout – 7.6-mm (0.3 in.) Dual-in-Line (DIP) leads on 2.54 mm (0.1 in.) centers  Choice of colors – GaP high efficiency red (HER), GaP green, AllnGaP deep red  C
11	HDSP-711E	Broadcom	5x7 Dot Matrix Alphanumeric Display  5 × 7 dot matrix font  Viewable up to 12 meters  X-Y stackable  Industry-standard pinout – 7.6-mm (0.3 in.) Dual-in-Line (DIP) leads on 2.54 mm (0.1 in.) centers  Choice of colors – GaP high efficiency red (HER), GaP green, AllnGaP deep red  C
12	MADS-002200-12790T	MACOM	Surface Mount Zero Bias Schottky Diodes • Available in Single and Series Pair Configurations • Small Profile Surface Mount Packages • Tape and Reel Deliverable • RoHS* Compliant Applications • Designed for High Volume, Low Cost Detector Applications Description The MA4E2200 series are sili
13	MBC50-1.5B14	MA-COM	MNOS Series Capacitor Beam Leads  Low Leakage Current  Low Insertion Loss  Excellent Long Term Stability Description The MBC50-x Series capacitors utilize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low lea
14	SIM300C	SIM Com	AT Commands Set
15	MBC50-33B13	MA-COM	MNOS Series Capacitor Beam Leads  Low Leakage Current  Low Insertion Loss  Excellent Long Term Stability Description The MBC50-x Series capacitors utilize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low lea
16	MBC50-68B13	MA-COM	MNOS Series Capacitor Beam Leads  Low Leakage Current  Low Insertion Loss  Excellent Long Term Stability Description The MBC50-x Series capacitors utilize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low lea
17	CDSV3-204-G	Comchip Technology	Small-Signal Switching Diode
18	CDSV6-4448AD	Comchip Technology	(CDSV6-4448xx) Small-Signal Switching Diode
19	CDSW4448-G	Comchip Technology	Small-Signal Switching Diode
20	CDSV3-217-G	Comchip Technology	Small Signal Schottky Diodes Designed for mounting on small surface. High speed switching. High mounting capability, strong surge withstand, high reliability. 0.054(1.35) 0.045(1.15) SOT-323 0.087(2.20) 0.059(1.80) 3 Mechanical data Case: SOT-323, molded plastic. Terminals: