No. | Partie # | Fabricant | Description | Fiche Technique |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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Motorola |
NPN silicon and PNP germanium mesa complementary transistors down Voltage (IC = 100 /LAde, VBE = 0) (Ie Collector-Base Breakdown Voltage = 100 /LAde, ~ = 0) Emitter-Base Breakdown Voltage (~= 100 /LAde, IC = 0) Collector Cutoff Current (VCB = 6 Vdc, ~ = 0) (VCB = 6 Vdc, ~ = 0, TA = 650 C) BVCES 7.0 BVCBO 7.0 |
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MA-COM |
Silicon Controlled Rectifier Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 TO-5 & TO-39 (TO-205AD) Package Rev. V2 Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current Forward Blocking Current Reverse Gate |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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Motorola |
NPN silicon and PNP germanium mesa complementary transistors down Voltage (IC = 100 /LAde, VBE = 0) (Ie Collector-Base Breakdown Voltage = 100 /LAde, ~ = 0) Emitter-Base Breakdown Voltage (~= 100 /LAde, IC = 0) Collector Cutoff Current (VCB = 6 Vdc, ~ = 0) (VCB = 6 Vdc, ~ = 0, TA = 650 C) BVCES 7.0 BVCBO 7.0 |
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Motorola |
NPN silicon and PNP germanium mesa complementary transistors down Voltage (IC = 100 /LAde, VBE = 0) (Ie Collector-Base Breakdown Voltage = 100 /LAde, ~ = 0) Emitter-Base Breakdown Voltage (~= 100 /LAde, IC = 0) Collector Cutoff Current (VCB = 6 Vdc, ~ = 0) (VCB = 6 Vdc, ~ = 0, TA = 650 C) BVCES 7.0 BVCBO 7.0 |
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Motorola |
NPN silicon and PNP germanium mesa complementary transistors down Voltage (IC = 100 /LAde, VBE = 0) (Ie Collector-Base Breakdown Voltage = 100 /LAde, ~ = 0) Emitter-Base Breakdown Voltage (~= 100 /LAde, IC = 0) Collector Cutoff Current (VCB = 6 Vdc, ~ = 0) (VCB = 6 Vdc, ~ = 0, TA = 650 C) BVCES 7.0 BVCBO 7.0 |
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MA-COM |
NPN Switching Silicon Transistor Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/251 TO-5 & TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Part # Units Min. Max. Off Characteristics: Collector - Emitter Breakdown Voltage |
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MA-COM |
NPN Switching Silicon Transistor Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/251 TO-5 & TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Part # Units Min. Max. Off Characteristics: Collector - Emitter Breakdown Voltage |
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MA-COM |
NPN Switching Silicon Transistor Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/251 TO-5 & TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Part # Units Min. Max. Off Characteristics: Collector - Emitter Breakdown Voltage |
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MA-COM |
Silicon Controlled Rectifier Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 TO-5 & TO-39 (TO-205AD) Package Rev. V2 Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current Forward Blocking Current Reverse Gate |
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MA-COM |
Silicon Controlled Rectifier Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 TO-5 & TO-39 (TO-205AD) Package Rev. V2 Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current Forward Blocking Current Reverse Gate |
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MA-COM |
Silicon Controlled Rectifier Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 TO-5 & TO-39 (TO-205AD) Package Rev. V2 Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current Forward Blocking Current Reverse Gate |
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MA-COM |
Silicon Controlled Rectifier Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 TO-5 & TO-39 (TO-205AD) Package Rev. V2 Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current Forward Blocking Current Reverse Gate |
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MA-COM |
Silicon Controlled Rectifier Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 TO-5 & TO-39 (TO-205AD) Package Rev. V2 Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current Forward Blocking Current Reverse Gate |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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MA-COM |
Radiation Hardened NPN Silicon Switching Transistors Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear |
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