Littelfuse S8X fiche technique

No.	Partie #	Fabricant	Description
1	S8X8ES1	Littelfuse	Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH
2	S8X8ES	Littelfuse	Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH
3	S8X8TS	Littelfuse	Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH
4	S8X8TS1	Littelfuse	Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH
5	S8X8ES2	Littelfuse	Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH
6	S8X8TS2	Littelfuse	Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH