Leshan Radio Company MMB fiche technique

No.	Partie #	Fabricant	Description
1	MMBD110T1	Leshan Radio Company	Schottky Barrier Diodes
2	MMBT1010LT1	Leshan Radio Company	Low Saturation Voltage
3	MMBZ5267BLT1	Leshan Radio Company	SEMICONDUCTOR
4	MMB3904LT1	Leshan Radio Company	General Purpose Transistor(NPN Silicon)
5	MMBD353LT1	Leshan Radio Company	Dual Hot Carrier Mixer Diodes
6	MMBD354LT1	Leshan Radio Company	Dual Hot Carrier Mixer Diodes
7	MMBD770T1	Leshan Radio Company	Schottky Barrier Diodes
8	MMBT2222LT1	Leshan Radio Company	General Purpose Transistors eakdown Voltage MMBT2222 (I C = 10 µAdc, I E = 0) Emitter –Base Breakdown Voltage MMBT2222A MMBT2222 (I E = 10 µAdc, I C = 0) Collector Cutoff Current MMBT2222A MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50
9	MMBT2369ALT1	Leshan Radio Company	Switching Transistors(NPN Silicon)
10	MMBT2484LT1	Leshan Radio Company	Low Noise Transistor(NPN Silicon)
11	MMBTH24LT1	Leshan Radio Company	VHF Transistors
12	MMBV609	Leshan Radio Company	Silicon Tuning Diode
13	MMBZ5269BLT1	Leshan Radio Company	SEMICONDUCTOR
14	MMBZ5270BLT1	Leshan Radio Company	SEMICONDUCTOR
15	MMBD352LT1	Leshan Radio Company	Dual Hot Carrier Mixer Diodes
16	MMBD352WT1	Leshan Radio Company	Dual Schottky Barrier Diode
17	MMBD355LT1	Leshan Radio Company	Dual Hot Carrier Mixer Diodes
18	MMBD914LT1	Leshan Radio Company	High-Speed Switching Diode
19	MMBT2222AWT1	Leshan Radio Company	Preliminary Information General Purpose Transistors
20	MMBT2369LT1	Leshan Radio Company	Switching Transistors(NPN Silicon)