| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Sony Corporation |
Dual wavelength Laser Diode |
|
|
|
|
Roithner Lasertechnik |
Infrared Laser Diode • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 690 nm • Optical Ouput Power: 350 mW, CW • Package: 9.0 mm, flat window Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 (PD on request) Bottom View Absolute |
|
|
|
|
ROHM |
650nm low power single mode laser diode 1) Optical output power : CW10mW 2) Single Mode 3) Ultra small type f3.5metal stem adoption lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Optical output power PO Laser diode VR Reverse voltage Photo diode VR(PD) Operating temperature |
|
|
|
|
ROHM |
650nm low power single mode laser diode 1) Optical output power : CW7mW 2) Single Mode 3) Highly precise f5.6metal stem adoption lDimensions (Unit : mm) Equivalent Circuit Diagram lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Optical output power PO Laser diode VR Reverse vo |
|
|
|
|
ROHM |
Laser Diode 0 0 0 658 5 MAX. 35 55 2.7 1.0 0.50 12.0 34 +3 +4 +100 666 10 Unit mA mA V W/A mA deg. deg. deg. deg. μm nm μm https://www.rohm.com/ © 2019 ROHM Co., Ltd. All rights reserved. 1/8 2019.5 - Rev.012 Po [mW] Vf [V] Po [mW] RLD65PZX3 Electrical |
|
|
|
|
WAVELENGTH |
Laser Diode Drivers AND BENEFITS • Models: 200 mA, 500 mA, 1.25 A, 5 A, and 6.5 A • Operates from a 5 VDC supply • Separate power supply can be used to drive high-compliance lasers up to 28 V • Constant Current or Constant Power modes • Safety features protect yo |
|
|
|
|
Samsung |
Laser Diode |
|
|
|
|
Laser Diode |
Single Heterojunction Stacked Diode Lasers |
|
|
|
|
Laser Diode |
Single Heterojunction Stacked Diode Lasers |
|
|
|
|
Laser Diode |
Single Heterojunction Stacked Diode Lasers |
|
|
|
|
Roithner LaserTechnik |
Red Laser Diode • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 633 nm • Optical Ouput Power: 220 mW, CW • Package: 9.0 mm, flat window Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 (PD on request) Bottom View Absolute |
|
|
|
|
Roithner |
Samsung Laser Diode |
|
|
|
|
ROHM |
650nm low power single mode laser diode 2.6 1.0 0.5 10.0 35 +3 +4 +100 665 10 Unit mA mA V W/A mA deg. deg. deg. deg. μm nm μm https://www.rohm.com/ © 2019 ROHM Co., Ltd. All rights reserved. 1/8 2019.5 - Rev.009 Po [mW] Vf [V] Po [mW] RLD65MZT7 Electrical Characteristics 25℃ 40℃ 50 |
|
|
|
|
ROHM |
650nm low power single mode laser diode 1) Optical output power : CW7mW 2) Single Mode 3) Highly precise f5.6metal stem adoption lDimensions (Unit : mm) Equivalent Circuit Diagram lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Optical output power PO Laser diode VR Reverse vo |
|
|
|
|
Sony Corporation |
Two-wavelength Laser Diode • Two wavelength 650nm/780nm • Without high-frequency superposing circuit Applications DVD, CD and CD-R/RW playback Recommended Optical Power Output 4mW (DVD), 4mW (CD) M-S011 Absolute Maximum Ratings (Tc = 25°C) • Optical power output Pomax (DVD) 5 |
|
|
|
|
Samsung |
Laser Diode |
|
|
|
|
Laser Diode |
Single Heterojunction Stacked Diode Lasers |
|
|
|
|
Rohm |
Low power red laser diode 1) The 10mW of the maximum rating corresponding to DVD-RAM read. 2) Optimization of a strained multi quantum well realizes the reduction in threshold current, and the good temperature characteristic. 3) Low threshold current : 25mA (TC=25°C). Laser |
|
|
|
|
Rohm |
Low power red laser diode 1) Glass less structure 2) Low Ith : 20mA (Po=5mW, Tc=25°C) 3) Excellent temperature characteristic Laser chip 0 5.6 + − 0.025 φ1.6 ± 0.1 0.5 min. 3 − φ 0.45 ± 0.1 Oprical distance 1.35 ± 0.08 Surmount 0.5max Figure−2 L.D 1 3 P .D. 2 zA |
|
|
|
|
Rohm |
DVD-ROM red laser diode 1) Optimization of a strained multi quantum well realizes the reduction in threshold current, and the good temperature characteristic. 2) Low threshold current : 25mA (TC=25°C) 3) Low noise is realized by a high frequency modulation element.. !Exter |
|