| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
LZG |
N-Channel MOSFET Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG 500 5.0 3.0 20 ±30 5 292 8.75 87.5 -55 to 150 V A A A V A mJ mJ W ℃ /Electric |
|
|
|
|
LZG |
N-Channel MOSFET Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 8.0 A ID(Tc=100℃) 5.1 A IDM 32 A VGSS ±30 V IAR 8 A EAS 320 mJ EAR 13.4 mJ PD(Tc=25℃) 44 W TJ,TSTG -55 |
|
|
|
|
LZG |
N-CHANNEL MOSFET Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 5.0 A ID(Tc=100℃) 3.0 A IDM 20 A VGSS ±30 V IAR 4.5 A EAS 292 mJ EAR 8.75 mJ PD(Tc=25℃) 38 W TJ,TSTG -5 |
|