| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
LZG |
N-CHANNEL MOSFET Low gate charge ,low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 2.0 1.3 6.0 ±30 120 5.4 2.0 23 -55 to 150 V A A A V mJ mJ A W ℃ /Electric |
|
|
|
|
LZG |
N-Channel MOSFET Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 5.5 3.3 22 ±30 300 12.5 5.5 80 -55 to 1 |
|