No. | Partie # | Fabricant | Description | Fiche Technique |
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LRC |
(L2N7002DW1T1G / L2N7002DW1T3G) Small Signal MOSFET T1G/T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate –Body |
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LRC |
Small Signal MOSFET |
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LRC |
Small Signal MOSFET |
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LRC |
Small Signal MOSFET ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● ESD Protecte |
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LRC |
Small Signal MOSFET ● RDS(ON) ≦8Ω@VGS=4V ● RDS(ON) ≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● ESD Protected:1000V APPLICATIONS ● Power Managemen |
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LRC |
Small Signal MOSFET |
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LRC |
Small Signal MOSFET ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● ESD Protecte |
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LRC |
Small Signal MOSFET ● RDS(ON) ≦8Ω@VGS=4V ● RDS(ON) ≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● ESD Protected:1000V APPLICATIONS ● Power Managemen |
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LRC |
Small Signal MOSFET ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● ESD Protecte |
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LRC |
(L2N7002DW1T1G / L2N7002DW1T3G) Small Signal MOSFET T1G/T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate –Body |
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|
LRC |
Small Signal MOSFET ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● ESD Protecte |
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LRC |
Small Signal MOSFET 1)ESD Protected 2)Low RDS(on) 3)Surface Mount Package 4)This is a Pb−Free Device 5)We declare that the material of product compliant with RoHS requirements and Halogen Free. 6) S- Prefix for Automotive and Other Applications Requiring Unique Site and |
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LRC |
Small Signal MOSFET 1)ESD Protected 2)Low RDS(on) 3)Surface Mount Package 4)This is a Pb−Free Device 5)We declare that the material of product compliant with RoHS requirements and Halogen Free. 6) S- Prefix for Automotive and Other Applications Requiring Unique Site and |
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|
LRC |
Small Signal MOSFET ● RDS(ON) ≦8Ω@VGS=4V ● RDS(ON) ≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● ESD Protected:1000V APPLICATIONS ● Power Managemen |
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LRC |
Small Signal MOSFET |
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LRC |
Small Signal MOSFET |
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LRC |
Small Signal MOSFET |
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|
LRC |
Small Signal MOSFET ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● ESD Protecte |
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|
LRC |
Small Signal MOSFET ● RDS(ON) ≦8Ω@VGS=4V ● RDS(ON) ≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● ESD Protected:1000V APPLICATIONS ● Power Managemen |
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