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LRC L2N DataSheet

No. Partie # Fabricant Description Fiche Technique
1
L2N7002DW1T3G

LRC
(L2N7002DW1T1G / L2N7002DW1T3G) Small Signal MOSFET
T1G/T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain
  –Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate
  –Body
Datasheet
2
L2N7002DMT1G

LRC
Small Signal MOSFET
Datasheet
3
S-L2N7002DMT1G

LRC
Small Signal MOSFET
Datasheet
4
L2N7002KDW1T1G

LRC
Small Signal MOSFET

● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
● ESD Protecte
Datasheet
5
L2N7002FWT1G

LRC
Small Signal MOSFET

● RDS(ON) ≦8Ω@VGS=4V
● RDS(ON) ≦13Ω@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● Capable doing Cu wire bonding
● ESD Protected:1000V APPLICATIONS
● Power Managemen
Datasheet
6
S-L2N7002EM3T5G

LRC
Small Signal MOSFET
Datasheet
7
L2N7002KWT1G

LRC
Small Signal MOSFET

● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
● ESD Protecte
Datasheet
8
S-L2N7002FDW1T1G

LRC
Small Signal MOSFET

● RDS(ON) ≦8Ω@VGS=4V
● RDS(ON) ≦13Ω@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● Capable doing Cu wire bonding
● ESD Protected:1000V APPLICATIONS
● Power Managemen
Datasheet
9
S-L2N7002DW1T1G

LRC
Small Signal MOSFET

● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
● ESD Protecte
Datasheet
10
L2N7002DW1T1G

LRC
(L2N7002DW1T1G / L2N7002DW1T3G) Small Signal MOSFET
T1G/T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain
  –Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate
  –Body
Datasheet
11
S-L2N7002KDW1T1G

LRC
Small Signal MOSFET

● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
● ESD Protecte
Datasheet
12
L2N7002KLT1G

LRC
Small Signal MOSFET
1)ESD Protected 2)Low RDS(on) 3)Surface Mount Package 4)This is a Pb−Free Device 5)We declare that the material of product compliant with RoHS requirements and Halogen Free. 6) S- Prefix for Automotive and Other Applications Requiring Unique Site and
Datasheet
13
S-L2N7002KLT1G

LRC
Small Signal MOSFET
1)ESD Protected 2)Low RDS(on) 3)Surface Mount Package 4)This is a Pb−Free Device 5)We declare that the material of product compliant with RoHS requirements and Halogen Free. 6) S- Prefix for Automotive and Other Applications Requiring Unique Site and
Datasheet
14
S-L2N7002FWT1G

LRC
Small Signal MOSFET

● RDS(ON) ≦8Ω@VGS=4V
● RDS(ON) ≦13Ω@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● Capable doing Cu wire bonding
● ESD Protected:1000V APPLICATIONS
● Power Managemen
Datasheet
15
L2N7002M3T5G

LRC
Small Signal MOSFET
Datasheet
16
S-L2N7002M3T5G

LRC
Small Signal MOSFET
Datasheet
17
L2N7002EM3T5G

LRC
Small Signal MOSFET
Datasheet
18
S-L2N7002KWT1G

LRC
Small Signal MOSFET

● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
● ESD Protecte
Datasheet
19
L2N7002FDW1T1G

LRC
Small Signal MOSFET

● RDS(ON) ≦8Ω@VGS=4V
● RDS(ON) ≦13Ω@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● Capable doing Cu wire bonding
● ESD Protected:1000V APPLICATIONS
● Power Managemen
Datasheet



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