No. | Partie # | Fabricant | Description | Fiche Technique |
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LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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|
|
LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
|
|
|
LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
|
|
|
LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
|
|
|
LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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