No. | Partie # | Fabricant | Description | Fiche Technique |
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LG Semicon |
4M x 4-Bit x 4 Bank SDRAM |
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LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
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LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
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LG Semicon |
SRAM et4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com |
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LG Semicon |
CMOS Static RAM * Fast Speed : 55/70ns at Vcc=5V+/-10% 120/150ns at Vcc=3V+/-10% * Low Power Standby and Low Power Operation -Standby : 0.11mW Max. at Vcc=5V+/-10% 49.5uW Max. at Vcc=3V+/-10% -Operation : 385mW Max. at Vcc=5V+/-10% DataSheet4U.com 66mW Max. at Vcc=3 |
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LG Semicon |
CMOS Static RAM com DataSheet 4 U .com |
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LG Semicon |
CMOS Static RAM com DataSheet 4 U .com |
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LG Semicon |
4M x 4-Bit x 4 Bank SDRAM |
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LG Semicon |
2M x 8-Bit x 4 Bank SDRAM * PC100,PC66 Compatible 7K(2-2-2), 7J(3-2-2), 10K(PC66) * 3.3V single Power supply * LVTTL interface * Max Clock frequency 100/125 MHz * 4,096 refresh cycle per 64 ms * Two kinds of refresh operation Auto refresh/ Self refresh * Programmable burst ac |
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LG Semicon |
256K x 1-Bit CMOS Dynamic RAM |
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LG Semicon |
4M x 4-Bit x 4 Bank SDRAM |
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LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
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LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
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LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
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LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
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LG Semicon |
CMOS Static RAM * Fast Speed : 55/70ns at Vcc=5V+/-10% 120/150ns at Vcc=3V+/-10% * Low Power Standby and Low Power Operation -Standby : 0.11mW Max. at Vcc=5V+/-10% 49.5uW Max. at Vcc=3V+/-10% -Operation : 385mW Max. at Vcc=5V+/-10% DataSheet4U.com 66mW Max. at Vcc=3 |
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LG Semicon |
CMOS Static RAM com DataSheet 4 U .com |
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LG Semicon |
CMOS Static RAM com DataSheet 4 U .com |
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LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
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LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
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