| No. | Partie # | Fabricant | Description | Fiche Technique |
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LG |
WXGA TFT LCD 15 Up-dated Table 6. OPTICAL CHARACTERISTICS 25, 28, 29 Up-dated 9-1. Packing Form, APPENDIX-I, APPENDIX-I-2 - CAS Version 1.0 Release - Final Specification Ver. 1.0 3 /37 Product Specification LC320DXJ 1. General Description The LC320DDXJ i |
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LG |
WUXGA TFT LCD 6,*1$/ 7,0,1* 63(&,),&$7,216 /9'6 6,*1$/ 63(&,),&$7,216 &2/25 '$7$ 5()(5(1&( 32:(5 6(48(1&( 237,&$/ 63(&,),&$7,216 0(&+$1,&$/ &+$5$&7(5,67,&6 5(/,$%,/,7< ,17(51$7,21$/ 67$1'$5'6 6$)(7< (0& (19,5210(17 3$&.,1* ,1)250$7,21 2) /&0 /$%(/ 3$&. |
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LG |
WUXGA TFT LCD Active Screen Size Outline Dimension Pixel Pitch Pixel Format Color Depth Drive IC Data Interface Transmittance (With POL) Viewing Angle (CR>10) Weight Display Mode Surface Treatment (Top) Ver. 1.0 31.55 inch (801.31mm) diagonal 714.0(H) x 411.0 (V) |
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LG |
TFT LCD Active Screen Size Outline Dimension Pixel Pitch Pixel Format Color Depth Luminance, White Viewing Angle (CR>10) Power Consumption Weight Display Mode Surface Treatment 42.02 Inches(1067.31mm) diagonal 955.0(H) × 557.7(V) X 9.9(B) / 22.0 mm(D) (Typ.) |
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LG |
WUXGA TFT LCD 6,*1$/ 7,0,1* 63(&,),&$7,216 /9'6 6,*1$/ 63(&,),&$7,216 &2/25 '$7$ 5()(5(1&( 32:(5 6(48(1&( 237,&$/ 63(&,),&$7,216 0(&+$1,&$/ &+$5$&7(5,67,&6 5(/,$%,/,7< ,17(51$7,21$/ 67$1'$5'6 6$)(7< (0& (19,5210(17 3$&.,1* ,1)250$7,21 2) /&0 /$%(/ 3$& |
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Shindengen |
Power MOSFET ・N-channel ・SMD ・Super Large Current ・Low Ron ・10V Gate Drive ・Low Capacitance ・Based on AEC-Q101 ・Halogen free ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): LG Package (JEDEC Code): MO-299B Equivalent circuit Shindengen Electric Manufa |
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Shindengen |
Power MOSFET ・N-channel ・SMD ・Super Large Current ・Low Ron ・10V Gate Drive ・Low Capacitance ・Halogen free ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): LG Package (JEDEC Code): MO-299B Equivalent circuit Shindengen Electric Manufacturing Co., Ltd. 1 |
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Shindengen |
Power MOSFET ・N-channel ・SMD ・Super Large Current ・Low Ron ・10V Gate Drive ・Low Capacitance ・Based on AEC-Q101 ・Halogen free ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): LG Package (JEDEC Code): MO-299B Equivalent circuit Shindengen Electric Manufa |
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Shindengen |
Power MOSFET ・N-channel ・SMD ・Super Large Current ・Low Ron ・10V Gate Drive ・Low Capacitance ・Halogen free ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): LG Package (JEDEC Code): MO-299B Equivalent circuit Shindengen Electric Manufacturing Co., Ltd. 1 |
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LG |
WUXGA TFT LCD Active Screen Size Outline Dimension Pixel Pitch Pixel Format Color Depth Luminance, White Viewing Angle (CR>10) Power Consumption Weight Display Mode Surface Treatment Ver. 0.2 LED Driver Back light Assembly 59.58 inch (1513.397mm) diagonal 1346. |
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NEC |
MOSFET • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, I |
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NEC |
MOSFET • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, I |
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LG Semicon |
Hex Non Inverted Buffers |
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Renesas |
MOS FIELD EFFECT TRANSISTOR • Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qual |
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Renesas |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • Gate t |
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Renesas |
Dual 4.5A GreenFET Load Switch • Two 4.5A independent MOSFETs • Two Integrated VGS Charge Pumps • Two internal discharges per channel for gate and source • Independent Ramp Control • Protected by thermal shutdown with current limit • Pb-Free / RoHS Compliant • Halogen-Free • STDFN |
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Shindengen |
Power MOSFET ・N-channel ・SMD ・Super Large Current ・Low Ron ・10V Gate Drive ・Low Capacitance ・Halogen free ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): LG Package (JEDEC Code): MO-299B Equivalent circuit Shindengen Electric Manufacturing Co., Ltd. 1 |
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ETC |
DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET • Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) S21 Gmax • +28 dBm P1dB Typical • +40 dBm Output IP3 Typical • High Drain Efficiency: Up to 46% at Class AB • 17 dB |
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Renesas |
N-Channel MOSFET • Logic level • Built-in gate protection diode • Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current rating ID(DC) = ±90 A • Low input capacitance Ciss = 4600 pF |
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Renesas |
N-Channel MOSFET • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gate to Source ESD protection diode built in • Designed for automotive application and AEC-Q101 |
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