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Renesas |
48-MHz CPU Ultra-low power consumption technology • VDD = single power supply voltage of 1.6 to 5.5 V • HALT mode • STOP mode • High-speed wakeup from the STOP mode is possible. • SNOOZE mode RL78 CPU core • CISC architecture with 3-stage pipeline • The minimum |
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ISOCOM |
AlGaAs light emitting diode and a high speed optical detector an open collector Schottky clamped transistor. The internal shield provides a guaranteed common mode transient immunity specification of 10 KV/us at 3.3V/5V operation. The device is in half pitch mini flat 5 pin package. FEATURES • Half Pitch 1.27mm |
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LG |
Color TV Manual |
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ISOCOM |
AlGaAs light emitting diode and a high speed optical detector an open collector Schottky clamped transistor. The internal shield provides a guaranteed common mode transient immunity specification of 15 KV/us at 3.3V operation. The device is in Stretched SO6 package. FEATURES • High Speed 15Mbit/s Typical • 3.3V |
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Advantech |
LGA775 Core 2 Quad CPU Card Complies with PICMG 1.3 Supports LGA 775 Intel® Core™ 2 Quad FSB 1333/1066/800 MHz Processors Supports Dual Channel DDR2 667/800 SDRAM up to 8 GB One PCI Express x16 and Four x1 to Backplane Dual Gigabit Ethernet via two PCI Express X1 Lane |
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MA-COM |
AlGaAs Flip Chip PIN Diodes Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Rev. V5 Chi |
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Tyco Electronics |
AlGaAs Flip-Chip PIN Diode • • • • • • • MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitri |
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Tyco Electronics |
AlGaAs Flip-Chip PIN Diode • • • • • • • MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitri |
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Toshiba Semiconductor |
Panel Circuit Indicator ge in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate re |
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Toshiba Semiconductor |
Panel Circuit Indicator ge in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate re |
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LG |
Liquid Crystal Display Active screen size Outline dimensions Pixel pitch Pixel format Color depth Luminance,White Power Consumption Weight Display operating mode Surface treatments 15.0 inches (38.1cm) diagonal 315.5(H) × 242.3(V) × 7.0(D) mm (typ) 0.297 mm × 0.297 mm 1024 |
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Toshiba |
LED 120 −40~100 −40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this pr |
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Toshiba |
LED 120 −40~100 −40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this pr |
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