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Advanced Power Electronics |
Complementary N and P-channel Enhancement-mode Power MOSFETs 30 ±20 -6.3 - 5. 0 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 |
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LEM |
AC Current transducer AP-B420L • RMS output • Split core type • Loop powered 4-20mA current output • DIN mounting & Panel mounting • Eliminates insertion loss • Switch selectable ranges AP 50 B420L AP 100 B420L AP 200 B420L AP 400 B420L < 350 +24 5 < 25 Ω V DC kV mA Load resista |
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LEM |
AC Current transducer AP-B10 • RMS output • Split core type • 5V & 10V switch selectable voltage output. • DIN mounting & Panel mounting • Eliminates insertion loss • Switch selectable ranges AP 50 B10 AP 100 B10 AP 200 B10 AP 400 B10 ≥ 10 kΩ +24 ±5% V DC 5 kV 18 V Load resist |
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Advanced Power Electronics |
Complementary N and P-channel Enhancement-mode Power MOSFETs -50 Units V V A A A W W/ °C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junc |
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