| No. | Partie # | Fabricant | Description | Fiche Technique |
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Kexin |
Epitaxial Planar NPN Transistor ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A SOT-89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector |
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Kexin |
Digital Transistors ● Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) ● The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the |
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Kexin |
Digital Transistors ● Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) ● The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the |
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Kexin |
Surface Mount PNP Silicon Power Darlington Transistor High current (max. 5A). Low voltage (max. 100V). 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Paramete |
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Kexin |
Digital Transistors ● Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) ● The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the |
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Kexin |
NPN Transistors ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 |
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Kexin |
Complementary Power Transistors Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb?Free Packages are Available +09.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +01.50 .15 |
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Guangdong Kexin |
NPN General Purpose Transistors +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak |
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Kexin |
PNP Transistors ● Excellent hFE Linearity : hFE(0.1mA) / hFE(2mA)=0.95(Typ.). ● Low Noise : NF=1dB(Typ.), 10dB(Max.). ● Complementary to KTC3875S. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm |
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Kexin |
Digital Transistors ● Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) ● The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the |
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Kexin |
Transistor General Purpose Transistors. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Collec |
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Kexin |
PNP Transistor Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 0-0.1 +0.10.38 -0.1 |
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Kexin |
NPN Transistors ● With Built-in Bias Resistors. ● Simplify Circuit Design. B R1 C +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 ■ Absolute Maximum Ratings Ta = |
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Guangdong Kexin Industrial |
Power Transistor Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current |
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Kexin |
Transistor +0.1 2.4-0.1 High fT: fT=400MHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage E |
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Kexin |
Silicon NPN Transistor +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curr |
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Kexin |
Small Signal Transistor High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base vo |
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Kexin |
PNP Transistors ● Small Flat Package ● Low Saturation Voltage ● Power Amplifier and Switching Application ● Comlementary to KTC4379 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Co |
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Kexin |
High Performance Transistors 60 Volt VCEO. 3 Amp continuous current. Low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Em |
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Kexin |
NPN Transistors ● Audio amplifier ● Flash unit of camera ● Switching circuit 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Colle |
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