| No. | Partie # | Fabricant | Description | Fiche Technique |
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Kexin |
NPN Transistors ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● PNP complements: BC859 and BC860. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2. |
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Kexin |
PNP Transistors ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base |
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Guangdong Kexin Industrial |
PNP Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maxi |
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Kexin |
(KC856x - KC858x) PNP Transistor +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 Ideally suited for automatic insertion 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = |
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Kexin |
NPN Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.9 |
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Kexin |
PNP Transistors ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector |
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Guangdong Kexin Industrial |
NPN Silicon AF Transistors +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current |
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Guangdong Kexin Industrial |
NPN Transistor +0.1 2.4-0.1 For Switching and AF Amplifier Applications 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Ideally suited for automatic insertion 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = |
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Guangdong Kexin Industrial |
PNP General Purpose Double Transistor Reduces number of components and board space No mutual interference between the transistors. +0.15 2.3-0.15 0.36 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Collector |
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Kexin |
(KC856x - KC858x) PNP Transistor +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 Ideally suited for automatic insertion 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = |
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KEXIN |
PNP Transistor Ideally suited for automatic insertion For Switching and AF Amplifier Applications +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Rating |
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Kexin |
NPN Multi-Chip General Purpose Amplifier High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitte |
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Kexin |
PNP Silicon AF Transistors High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Rati |
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Kexin |
PNP Silicon AF Transistors High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Rati |
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Kexin |
PNP Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.9 |
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Kexin |
PNP Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.9 |
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Kexin |
PNP Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base |
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Kexin |
PNP Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base |
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Kexin |
NPN Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.9 |
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Kexin |
NPN Silicon AF Transistors For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) |
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