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Kexin |
PNP Transistors ● Low collector-emitter saturation voltage ● High current capability ● Improved device reliability due to reduced heat generation. 2, 4 1 3 SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (ty |
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Kexin |
NPN Transistors ● High collector current capability ● High collector current gain ● Improved efficiency due to reduced heat generation. ● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat 1 3 2 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0. |
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Kexin |
PNP Transistors ● Low collector-emitter saturation voltage VCEsat ● High collector current capability: IC and ICM ● High efficiency, reduces heat generation ● Reduces printed-circuit board area required +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 + |
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