| No. | Partie # | Fabricant | Description | Fiche Technique |
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Kexin |
MOS Field Effect Transistor Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 3.00+0.1 |
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Kexin |
N-Channel MOSFET ● VDS (V) = 60V ● ID = 1 A Drain (D) ● RDS(ON) ＜ 0.45Ω (VGS = 10V) ● RDS(ON) ＜ 0.6Ω (VGS = 4V) ● Pb−Free Package May be Available. Gate (G) Gate protection Internal diode diode Source (S) The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 |
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Kexin |
MOS Field Effect Transistor Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 3.00+0.1 |
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