| No. | Partie # | Fabricant | Description | Fiche Technique |
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Kexin |
N-Channel MOSFET ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) ● Fast Switching D TO-263 9.65 (Min) 10.67 (Max) 90 ~ 93 5.33 (Min) Unit:mm 6.22 (min) 1.65 (max) 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 9.65 (MAX) 8.51 (MIN) 15.88 |
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Kexin |
N-Channel MOSFET ƽ VDSS = 75V ƽ RDS(ON) = 0.007 ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolu |
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Kexin |
N-Channel MOSFET ● VDS (V) = 60V ● ID = 12 A (VGS = 10V) ● RDS(ON) ＜ 9.4mΩ (VGS = 10V) S S S G 1 2 3 4 SOP-8 AA 8D 7D 6D 5D +0.040.21 -0.02 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ |
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