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Kexin |
2SB1184 Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter |
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Kexin |
Power transistor Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter |
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Kexin |
Zener Diodes ● Wide Zener Voltage Range Selection, 2.0V to 75V ● VZ Tolerance Selection of ±2% (B Series) ● Flat Lead SOD-123FL Plastic Package ● Surface Device Type Mounting ● RoHS Compliant ● Green EMC 1 Cathode 2 Anode SOD-123FL 1.6±0.1 0.6±0.1 2.6±0.1 3.5 |
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Kexin |
Zener Diodes Silicon Planar Power Zener Diodes. For use as low voltage stabilizer or voltage reference. The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request. Diodes available in th |
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Kexin |
PNP Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = |
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Kexin |
Silicon PNP epitaxial planar type Transistor Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. Large collector current IC. +0.2 9.70 -0.2 +0.15 0.50 -0.15 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 |
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Kexin |
Medium Power Transistor High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Stora |
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Kexin |
Low Frequency Transistor Low VCE(sat).VCE(sat) IC = -0.8A. +0.1 2.4-0.1 Unit: mm PNP silicon transistor +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 -0.5V IC / IB= -0.5A / -50mA . 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Max |
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Kexin |
Zener Diodes ● Very sharp reverse characteristic ● Low reverse current level ● Very high stability ● Low noise LL-34 Unit: mm 2.64REF 0.50 0.35 1.50 1.30 3.60 3.30 CATHODE BAND ■ Absolute Maximum Ratings Ta = 25℃ Parameter Forward voltage @ IF=200mA Zener c |
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Kexin |
PNP Transistors Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emi |
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Kexin |
PNP Transistors ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-80V ● Complementary to 2SD1782K +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 |
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Kexin |
Transistor Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current |
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Kexin |
Transistor World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current (pulse) * Total power |
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Kexin |
Transistor World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current (pulse) * Total power |
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Kexin |
PNP Epitaxial Planar Silicon Transistors Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base |
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Kexin |
PNP Epitaxial Planar Silicon Transistors Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (puls |
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Kexin |
Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltag |
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Kexin |
PNP Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltag |
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Kexin |
Medium Power Transistor Low VCE(sat) Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Single pulse, PW =100ms Collector Power Dissipation Jumction temperature Stor |
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Kexin |
Silicon PNP epitaxial planar type Transistor +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High forward current transfer ratio hFE which has |
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