| No. | Partie # | Fabricant | Description | Fiche Technique |
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Kexin |
P-Channel MOSFET ● VDS (V) =-50V ● ID =-0.1 A (VGS =-4V) ● RDS(ON) ＜ 20Ω (VGS =-4V) ● RDS(ON) ＜ 40Ω (VGS =-2.5V) ● Comp;ementary to 2SK1399 P-Channel MOSFET 2SJ185 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 |
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Kexin |
MOS Fied Effect Transistor Directly driven by Ics having a 5V poer supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0 |
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Kexin |
MOSFET Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 |
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Kexin |
MOSFET Super low on-state resistance: RDS(on)1 = 20 m RDS(on)2 = 31 m MAX. (VGS = -10 V, ID = -33 A) + 0 .2 8 .7 -0 .2 MAX. (VGS = -4.0 V, ID = -33 A) Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 |
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Kexin |
P-Channel MOSFET ● VDS (V) =-30V ● ID =-200m A ● RDS(ON) ＜ 8Ω (VGS =-10V) ● RDS(ON) ＜ 13Ω (VGS =-4V) ● Compementary to 2SK1582 +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0 |
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Guangdong Kexin Industrial |
MOS Fied Effect Transistor +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Possible to reduce the number of parts by omitting the bias resisor. 0.55 Not necessary to consider driving current thanks to hight input impedance. +0.1 1.3-0.1 Directly driven by Ics having a 3V po |
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Guangdong Kexin Industrial |
MOS Field Effect Power Transistors Low on-state resistance RDS(on)=83m RDS(on)=0.15 (VGS=-10V,ID=-2A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in G-S Gat |
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Kexin |
MOSFET Low on-resistance RDS(on)1 =30 m RDS(on)2 = 43m MAX. (VGS =-10 V, ID = -23A) MAX. (VGS = -4.0 V, ID =-23 A) +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 3300 pF TYP. Built-in gate protection diode 2.54 5.08 +0. |
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Kexin |
MOSFET Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Low Ciss: Ciss = 3300 pF TYP. |
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Kexin |
P-Channel MOSFET ● VDS (V) =-16V ● ID =-2 A ● RDS(ON) ＜ 1Ω (VGS =-4V) ● RDS(ON) ＜ 3Ω (VGS =-2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current P |
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Kexin |
P-Channel MOSFET ● VDS (V) =-50V ● ID =-0.1 A ● RDS(ON) ＜ 50Ω (VGS =-4V) ● RDS(ON) ＜ 100Ω (VGS =-2.5V) P-Channel MOSFET 2SJ461 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0. |
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Kexin |
P-Channel MOSFET ● VDS (V) =-30V ● ID =-0.5 A (VGS =-10V) ● RDS(ON) ＜ 3Ω (VGS =-10V) ● RDS(ON) ＜ 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuou |
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Guangdong Kexin Industrial |
MOSFET Low on-resistance RDS(on)1 = 130 m RDS(on)2 = 190 m MAX. (VGS =-10 V, ID = -6 A) MAX. (VGS = -4.0 V, ID =-6 A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode +0.1 0.80-0.1 +0.15 0.5 |
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Guangdong Kexin Industrial |
MOSFET +0.1 2.50-0.1 RDS(on)=0.55 (VGS=-4V,ID=-1.0A) Low leakage current :IDSS=-100 A Max.)(VDS=-60V) +0.1 0.80-0.1 High forward transfer admittance :|Yfs|=0.9S(Typ.) 1 +0.1 0.48-0.1 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 L |
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Kexin |
MOSFET Low on-resistance RDS(on)1 =11 m RDS(on)2 = 16 m MAX. (VGS =-10 V, ID = -42A) Low Ciss: Ciss = 7500 pF TYP. Built-in gate protection diode +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 MAX. ( |
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Kexin |
MOSFET Low on-resistance RDS(on)1 = 73 m RDS(on)2 = 107m MAX. (VGS =-10 V, ID = -10 A) Low Ciss: Ciss = 1300 pF TYP. Built-in gate protection diode +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 MAX. |
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Kexin |
P-Channel MOSFET ● VDS (V) =-16V ● ID =-1 A (VGS =-10V) ● RDS(ON) ＜ 1.5Ω (VGS =-4V) ● RDS(ON) ＜ 4Ω (VGS =-2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous D |
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Kexin |
P-Channel MOSFET ● VDS (V) =-100V ● ID =-0.2 A ● RDS(ON) ＜ 20Ω (VGS =-10V) ● RDS(ON) ＜ 30Ω (VGS =-4V) P-Channel MOSFET 2SJ211 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm |
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Kexin |
P-Channel MOSFET ● Surface Mount Package ● Super High Density Cell Design for Extremely Low RDS(on) ● Exceptional On-resistance and Maximum DC Current Capability ( SOT-23-6 ) 0.4+0.1 -0.1 6 54 1 23 +0.01 -0.01 +0.2 -0.1 +0.21.6 -0.1 +0.22.8 -0.1 0.55 0.4 Unit: m |
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Kexin |
P-Channel MOSFET ● VDS (V) =-60V ● ID =-16 A ● RDS(ON) ＜ 100mΩ (VGS =-10V) ● RDS(ON) ＜ 240mΩ (VGS =-4V) MOSFET ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power |
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