| No. | Partie # | Fabricant | Description | Fiche Technique |
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Kexin |
Transistor +0.1 2.4-0.1 High fT: fT=400MHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage E |
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Kexin |
PNP Transistors High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base |
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Kexin |
PNP Transistors ● High voltage ● Large continuous collector current capability 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Col |
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Kexin |
Transistors Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo |
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Kexin |
Power Transistor Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: |
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Kexin |
2SA1608 High fT: fT=400MHz. PNP Silicon Epitaxia 2SA1608 TransistIoCrs Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage |
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Kexin |
PNP Transistors Suitable for driver stage of small motor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = |
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Kexin |
PNP Transistors High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE(sat) = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515 Absolute Maximum Ratings T |
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Kexin |
Silicon PNP Transistor 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temp |
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Kexin |
Medium Power Transistor Large IC. ICMax. = -500mA Low VCE(sat). Ideal for low-voltage operation. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 |
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Kexin |
Transistors Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base |
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Guangdong Kexin Industrial |
PNP Epitaxial Planar Silicon Transistors 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperatu |
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Kexin |
PNP Epitaxial Planar Silicon Transistors +0.1 2.4-0.1 Fast switching speed. High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage C |
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Kexin |
Transistors Low collector to emitter saturation voltage. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Super mini package for easy mounting. 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Excellent linearity nof DC forward current gain. High collector current. High g |
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Kexin |
Transistor Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Co |
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Kexin |
Transistor High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage t |
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Kexin |
Silicon PNP Transistor High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) Excellent hFE Linearity : hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.) High hFE: hFE=70 to 400 2 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.01 0.1-0.01 1 +0.15 1.6-0.15 0.55 +0.25 0.3-0.05 +0.1 0.5-0.1 0 |
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Kexin |
2SA1363 High hFE : hFE = 150 to 800 High Collector Current (IC = -2A) High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3443 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitt |
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Kexin |
2SA1365 Low collector to emitter saturation voltage. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Super mini package for easy mounting. 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Excellent linearity nof DC forward current gain. High collector current. High g |
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Kexin |
PNP Transistors ● Collector Current Capability IC=-0.1A ● Collector Emitter Voltage VCEO=-120V ● Complementary to 2SC5213 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Bas |
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