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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Complementary to KTC2026. KTA1046 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-B |
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KEC |
KTA1268 |
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KEC |
KTA1274 |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Complementary to KTC1027. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌComplementary to KTC3205. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC I |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. KTA1270 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junctio |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High DC Current Gain : hFE=100 320. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). Suitable for Driver Stage of Small Motor. Complementary to KTC3265. Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Ba |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌHigh hFE : hFE=100ᴕ320. ᴌComplementary to KTC3203. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Tempera |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3542T. MA |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌHigh hFE : hFE=100ᴕ320. ᴌComplementary to KTC3204. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Tempera |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector Saturation Voltage. : VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) Large Collector Current : IC=-10A(dc) IC=-15A(10ms, single pulse) Complementary to KTC5001D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Em |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Voltage : VCEO=-120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTC4373. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -120 Coll |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Transition Frequency : fT=100MHz(Typ.). Complementary to KTC4370/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTA1659 KTA1659A Collector-Emitter Voltage KTA1659 KTA1659A Emitter-Base Voltage Collector Current Base Cur |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-2A Complementary to KTC3266. KTA1296 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198. KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Base Curr |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Transition Frequency : fT=100MHz(Typ.). Complementary to KTC2983D/L MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Col |
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