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KEC |
KTD1414 High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Tempera |
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KEC |
Triple Diffused NPN Transistor High Voltage : VCBO 1500V. Low Saturation Voltage :VCE(sat)=5V(Max.) (IC=4A, IB=0.8A). High Speed : tf=0.3 S(Typ.) Built-in Damper Diode. Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collec |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Em |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB778. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Colle |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌHigh hFE : hFE=500ᴕ1500 (IC=0.5A). ᴌLow Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌHigh Breakdown Voltage : VCEO=180V(Min.) ᴌHigh Transition Frequency : fT=100MHz(Typ.) ᴌHigh Current : IC(max)=2A ᴌComplementary to KTB1469. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR ᴌGood Linearity of hFE. ᴌComplementary to KTB989. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25ᴱ) Juncti |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR ᴌLow Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A ᴌComplementary to KTB988. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCE |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌLow Saturation Voltage. : VCE(sat)=0.5V(Max.) (IC=3A, IB=60mA). ᴌHigh Collector Current. : IC=5A, ICP(Peak Current )=8A. ᴌWide ASO. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌHigh foward current transfer ratio hFE. ᴌLow collector to emitter saturation voltage VCE(sat). ᴌHigh emitter to base voltage VEBO. ᴌLow noise voltage NV. ᴌESM type package, allowing downsizing of the equipment and automatic insertion through the tap |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR ᴌRecommended for 45ᴕ50W Audio Frequency Amplifier Output Stage. ᴌComplementary to KTB688. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dis |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR ᴌComplementary to KTB1367. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Rang |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌHigh DC Current Gain : hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Em |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌAdoption of MBIT processes. ᴌLow collector-to-emitter saturation voltage. ᴌFast switching speed. ᴌLarge current capacity and wide ASO. ᴌComplementary to KTB985. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Vollector-Emitt |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Good Linearity of hFE. Complementary to KTB1368. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature St |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Complementary to KTB1366. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCE |
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KEC |
Triple Diffused NPN Transistor • Complementary to KTB2630G • High power Amplifier for 100W Audio • High DC Current Gain hFE = 6,500~30,000 (VCE= 4V, IC = 7A) • Wide SOA H PACKAGE DIMENSION (TO-3P(N)-E) A N O D E d PP 123 I F Q B K C J G L DIM MILLIMETERS A 15.60 _+ 0.20 |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR |
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