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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR High Voltage : VCEO=160V. Large Continuous Collector Current Capability. Recommended for Vert. Deflection Output & Sound Output Applications for Line Operated TV. Complementary to KTA1275. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-B |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌLow Collector-Emitter Saturation Voltage : VCE(sat)=2.0V(Max.). ᴌComplementary to KTA1049. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power D |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1281. KTC3209 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Co |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity. Complementary to KTC9013. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperat |
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KEC |
TRIPLE DIFFUSED PNP TRANSISTOR ᴌRecommended for Output Stage Application of AM 4W Transmitter. ᴌHigh Power Gain. ᴌWide Area of Safe Operation. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage (RBE=50ή) Emitter-Base Voltage Collector Current |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌComplementary to KTA1023. MAXIMUM RATING (Ta=25ᴱ) CHA RACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTC4370 KTC4370A Collector-Emitter Voltage KTC4370 KTC4370A Emitter-Base Voltage Collector Current Base Cu |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌExcellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). ᴌLow Noise :NF=1dB(Typ.) at f=1kHz. ᴌComplementary to KTC9014. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌLow Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. ᴌComplementary to KTA1046. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Curre |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌComplementary to KTA1282. KTC3210 EPITAXIAL PLANAR NPN TRANSISTOR BC JA MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Jun |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌA super-minimold package houses 2 transistor. ᴌExcellent temperature response between these 2 transistor. ᴌHigh pairing property in hFE. ᴌThe follwing characteristics are common for Q1, Q2. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR rrent Gain Collector-Emitter Saturation Voltage ICBO IEBO hFE (1) hFE (2) VCE(sat) Transition Frequency fT Collector Output Capacitance Cob TEST CONDITION VCB=240V, IE=0 VEB=5V, IC=0 VCE=10V, IC=0.5mA VCE=10V, IC=20mA IC=10mA, IB=1mA VCE=20V, I |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌComplementary to KTA1273. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR High Power Dissipation : PC=1.3W(Ta=25 ) Complementary to KTA1385D KTC5103D EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity. Complementary to KTC9013SC. KTC9012SC EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -40 -30 Emitter-Base Voltage VEBO |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity. Complementary to KTC9013S. 2 3 L E B L 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temp |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). Complementary to KTC9014S. A G L E B L Low Noise :NF=1dB(Typ.) at f=1kHz. 2 3 1 P P N C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ᴌHigh Transition Frequency : fT=100MHz(Typ.). ᴌComplementary to KTA1700. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Col |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR BO IEBO hFE (1) hFE (2) VCE(sat) fT Collector Output Capacitance Cob TEST CONDITION VCB=240V, IE=0 VEB=5V, IC=0 VCE=10V, IC=0.5mA VCE=10V, IC=20mA IC=10mA, IB=1mA VCE=20V, IC=20mA VCB=20V, IE=0, f=1MHz MIN. 20 30 75 - TYP. 95 - MAX. 1.0 1.0 200 |
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