No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Complementary to KTC2026. KTA1046 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-B |
|
|
|
KEC |
KTA1268 |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Complementary to KTC1027. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE |
|
|
|
KEC |
KTA1274 |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junctio |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High DC Current Gain : hFE=100 320. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). Suitable for Driver Stage of Small Motor. Complementary to KTC3265. Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Ba |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Collector-Base Voltage : VCBO=-60V. Complementary to KTC815. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature St |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector Saturation Voltage. : VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) Large Collector Current : IC=-10A(dc) IC=-15A(10ms, single pulse) Complementary to KTC5001D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Em |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌComplementary to KTC3205. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC I |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌHigh hFE : hFE=100ᴕ320. ᴌComplementary to KTC3203. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Tempera |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. KTA1270 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1 S(Typ.) Complementary to KTC2815D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1 S(Typ.) Complementary to KTC2815D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌExcellent hFE Linearity. : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA ᴌ1 Watt Amplifier Application. ᴌComplementary to KTC1020. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR ᴌHigh hFE : hFE=100ᴕ320. ᴌComplementary to KTC3204. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Tempera |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075. Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075V. Very Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter- |
|
|
|
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075F. Thin Fine Pitch Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Volta |
|