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KEC |
N-Channel MOSFET VDSS=650V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 30 @TC=25 Drain Current @TC=100 Pulsed (Note1 |
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KEC |
N-Channel MOSFET VDSS=650V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBO L RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 30 @TC=25 Drain Current @TC=100 Pulsed (Not |
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KEC |
N-Channel MOSFET VDSS=650V, ID=15A Drain-Source ON Resistance : RDS(ON)(Max)=0.28 @VGS=10V Qg(typ.)= 38nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 30 @TC=25 Drain Current @TC=100 Pulsed (Note |
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KEC |
N-Channel MOSFET VDSS=600V, ID=15A Drain-Source ON Resistance : RDS(ON)(Max)=0.28 @VGS=10V Qg(typ.)= 32nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note |
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KEC |
N-Channel MOSFET VDSS=650V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 28nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 30 @TC=25 Drain Current @TC=100 Pulsed (Note |
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KEC |
N-Channel MOSFET VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1 |
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KEC |
N-Channel MOSFET VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed A |
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KEC |
N-Channel MOSFET VDSS=650V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 28nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 30 @TC=25 Drain Current @TC=100 Pulsed (Note |
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KEC |
N-Channel MOSFET VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 23nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note |
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KEC |
N-Channel MOSFET VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 23nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBO L RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (No |
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