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KEC |
N-Channel MOSFET VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ.) = 26nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF11N50P KF11N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Cur |
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KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.69 Qg(typ.)= 29.5nC @VGS=10V D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N 15.95 |
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KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF10N50P KF10N50F UNIT KF10N50PZ KF10N50FZ Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS |
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KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=680V, ID=12A Drain-Source ON Resistance : RDS(ON)(Max)=0.71 @VGS=10V Qg(typ.)= 30nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 680 30 @TC=25 Drain Current @TC=100 Pulsed (Note |
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KEC |
N-channel MOSFET VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF12N60P KF12N60F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 V V @TC=25 Drai |
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KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF10N50P KF10N50F UNIT KF10N50PZ KF10N50FZ Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS |
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KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.69 Qg(typ.)= 29.5nC @VGS=10V D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N 15.95 |
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KEC |
N-Channel MOSFET VDSS(Min.)= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ.) =21nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 200 30 @TC=25 Drain Current @TC=100 |
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KEC |
N-Channel MOSFET VDSS(Min.)= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ.) =21nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 200 30 @TC=25 Drain Current @TC=100 |
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KEC |
N-Channel MOSFET VDSS= 250V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.24 Qg(typ) = 21nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 250 30 @TC=25 Drain Current @TC=100 Pulsed (Not |
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KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS(Min.)= 500V, ID= 17A Drain-Source ON Resistance : RDS(ON)=0.35(Max.) Qg(typ.) =41nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25¡É Pulsed Single Pulsed A |
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KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS(Min.)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max.) Qg(typ.) =36nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed Single Pulsed Ava |
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KEC |
N-channel MOSFET VDSS= 500V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.44 (Max) @VGS = 10V Qg(typ.) = 35nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF13N50P KF13N50F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 V 30 V @TC=25 |
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KEC |
N-channel MOSFET VDSS= 500V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.44 (Max) @VGS = 10V Qg(typ.) = 35nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF13N50P KF13N50F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 V 30 V @TC=25 |
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KEC |
SAW Filter |
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KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=680V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.95 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 680 30 @TC=25 Drain Current @TC=100 Pulsed (Note |
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KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ.)= 40.8nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF16N50P KF16N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Current |
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KEC |
BAND PASS FILTERS |
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KEC |
BAND PASS FILTERS |
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KEC |
N-Channel MOSFET VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)(Max)=0.155 @VGS=10V Qg(typ.)= 21nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 200 30 @TC=25 Drain Current @TC=100 Pulsed (Not |
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