| No. | Partie # | Fabricant | Description | Fiche Technique |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). For Complementary with PNP type BC327. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). For Complementary With NPN type BC237/238/239. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC307 Collector-Base Voltage BC308 BC309 BC307 Col |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). For Complementary With NPN type BC237/238/239. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC307 Collector-Base Voltage BC308 BC309 BC307 Col |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC338. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cur |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). For Complementary With NPN type BC237/238/239. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC307 Collector-Base Voltage BC308 BC309 BC307 Col |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren |
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